Incorporation phenomena of donor dopant in BaTiO3 systems

Hur, Soo Hyung; Lee, Jung Kun; Hong, Kyoung Sup; Park, Soon Ja

doi:10.1016/s0167-2738(98)00022-8

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…This component is consistent with the proposition in this study that a part of donor dopants segregated by controlling the content of donor dopants and the heat-treatment atmosphere, which affected the characteristics of donor-doped BaTiO 3 . 18,19 Comparing Figs. 1 and 8 shows that the grain size decreased continuously with increased donor-dopant concentration and that the bending point of several properties for various atmospheres coincided with the composition at which the grain size decreased rapidly.…”

Section: (2) Incorporation Of Donor Dopantsmentioning

confidence: 99%

Revisit to the Origin of Grain Growth Anomaly in Yttria‐Doped Barium Titanate

Lee

Hong

Chung

2001

Journal of the American Ceramic Society

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In this study, the effect of atmosphere during calcining and sintering of Y 2 O 3 -doped BaTiO 3 was investigated to reveal the origin of the anomaly of grain growth and conductivity as a function of Y 2 O 3 content. Samples with various atmospheric histories were prepared. Microstructural and electrical variations were observed using SEM, dielectric ( r vs T) and thermopower measuring techniques, and impedance spectroscopy. An abrupt decrease in grain growth and a transition from semiconducting to insulating behavior were observed when the Y 2 O 3 concentration exceeded 0.3 mol% and the samples were heat-treated in an O 2 atmosphere. In contrast, the samples treated under N 2 ؉ 5% H 2 atmosphere revealed neither grain growth anomaly nor conductivity anomaly even though the Y 2 O 3 concentration was much greater than 3 mol%. The undoped BaTiO 3 samples also demonstrated increased average grain size with increased oxygen partial pressure. Therefore, it was suggested that the grain growth anomaly did not result from the formation of cation vacancies V؆ Ba or V ؆؆ Ti . To investigate the origin of the grain growth anomaly, the Curie temperature, concentration of free electrons, and impedance spectra were measured. The grain growth anomaly and conductivity anomaly were associated with abrupt changes in all the measurements. These abrupt changes could be explained by the partial incorporation of donor dopants. Consequently, the origin of the anomaly in the microstructure and electrical properties are discussed in terms of grain-boundary segregation of the donor dopant.

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Section: (2) Incorporation Of Donor Dopantsmentioning

confidence: 99%

Revisit to the Origin of Grain Growth Anomaly in Yttria‐Doped Barium Titanate

Lee

Hong

Chung

2001

Journal of the American Ceramic Society

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“…The doping of a trivalent dopant like yttrium at barium site is known to significantly increase the number of point defects such as oxygen and barium vacancies . The presence of defect discontinuity expected to hinder the grain growth process and hence caused a decrease in average particle size . The tightly packed particles with less number of voids contribute to give a good material density.…”

Section: Resultsmentioning

confidence: 99%

Modulating the Effect of Yttrium Doping on the Structural and Dielectric Properties of Barium Titanate

Kumar

Thakur

Luthra

2018

Physica Status Solidi (a)

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In this paper, the influence of yttrium doping on the structural, dielectric, and piezoelectric properties of Ba1−1.5xYxTiO3 (x = 0–0.03) is investigated. The samples are synthesized using solid‐state route (SSR). The synthesized materials are analyzed by X‐ray diffraction (XRD), which indicated the formation of crystalline materials exhibiting tetragonal phase. The samples with composition x = 0.005 and 0.01 are denser relative to other samples. The dielectric constant and loss tangent are measured in the temperature range −30 to 250 °C for different frequencies. The dielectric constant increases upto x = 0.005 (7555 at 1 kHz) and decreases thereafter. The shifts in the transition temperature (Tc) are corroborated with differential scanning calorimetry (DSC) studies. The electron paramagnetic resonance (EPR) data reveals that yttrium occupied Ti‐site after a certain limit of dissolution at Ba‐site. Modified Curie‐Weiss law was employed to study the extent of diffusivity. The effects of Y doping on morphology are investigated using scanning electron microscopy. The maximum remanence value (2Pr) and piezoelectric coefficient (d33) are 8.178 μC cm−2 and 116 pC/N respectively for x = 0.005 doping composition. A correlated behavior of optimum values is observed in density, dielectric constant, and piezoelectric coefficient which can be exploited for various applications.

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The influences of controlling sintering mechanism on electrical properties of multilayer PTCR chip

Huang

Chen

et al. 2015

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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Experiments were designed to investigate the influence of controlling sintering mechanism on electrical properties of multilayer PTCR chip. During the preparation process, heating rate, sintering temperature, high-temperature holding time and cooling method were respectively regulated to prepare multilayer PTCR chip with good performance. After the process of organic casting, the casting PTCR green films were sintered at 1 260-1 280 ℃ for 0.5 h at reduction atmosphere, which was heated at the rate of 400 ℃/h. Then selecting 300 ℃/h as the cooling rate, the ceramics were oxidated at 850 ℃ for 1 h. The prepared multilayer PTCR chips exhibited room temperature resistivity of below 100 Ω·cm, and resistance rising rate more than 104 unit through the Curie temperature.

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Incorporation phenomena of donor dopant in BaTiO3 systems

Cited by 4 publications

References 3 publications

Revisit to the Origin of Grain Growth Anomaly in Yttria‐Doped Barium Titanate

Revisit to the Origin of Grain Growth Anomaly in Yttria‐Doped Barium Titanate

Modulating the Effect of Yttrium Doping on the Structural and Dielectric Properties of Barium Titanate

The influences of controlling sintering mechanism on electrical properties of multilayer PTCR chip

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