2005
DOI: 10.4218/etrij.05.0104.0166
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Indium Tin Oxide Thin Films Grown on Polyethersulphone (PES) Substrates by Pulsed-Laser Deposition for Use in Organic Light-Emitting Diodes

Abstract: , respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

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Cited by 20 publications
(2 citation statements)
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“…To confirm the electrical properties of the Si-QD devices, we further deposited an n-type amorphous SiC film ($300 nm) doped with a phosphorous, as well as indium tin oxide (ITO; $100 nm) layer on top of it. 17,18) The latter is to spread the current, thereby enhancing the current injection efficiency into the Si-QD. The n-type amorphous SiC layer was prepared by PECVD, in which argon-diluted 10% SiH 4 and CH 4 was used.…”
Section: Methodsmentioning
confidence: 99%
“…To confirm the electrical properties of the Si-QD devices, we further deposited an n-type amorphous SiC film ($300 nm) doped with a phosphorous, as well as indium tin oxide (ITO; $100 nm) layer on top of it. 17,18) The latter is to spread the current, thereby enhancing the current injection efficiency into the Si-QD. The n-type amorphous SiC layer was prepared by PECVD, in which argon-diluted 10% SiH 4 and CH 4 was used.…”
Section: Methodsmentioning
confidence: 99%
“…2 The doping process increases the conductivity of these oxides, while the higher band gap (>3 eV) ensures transparency in the visible portion of the spectrum. Thin film solar cells, 3 liquid crystal flat panel displays, 4 OLED displays, 5 and transparent high-mobility thin film transistors (TFTs) 6 are some applications of TCOs. Tindoped indium oxide (ITO), aluminum-doped zinc oxide (AZO), and fluorine-doped tin oxide (FTO) are some examples of widely used TCOs.…”
Section: ■ Introductionmentioning
confidence: 99%