2012
DOI: 10.1038/srep00969
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Induced magnetic moment of Eu3+ ions in GaN

Abstract: Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of electrical excitation of characteristic sharp emission lines from intra 4f-shell transitions. Recently, electroluminesc… Show more

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Cited by 39 publications
(37 citation statements)
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“…On the other hand, samples with Dy concentrations of x < 0.055 exhibited magnetic moments that were larger than expected which may be related to additional contributions arising from a spin polarisation of the Bi 2 Te 3 matrix by the Dy atoms. Giant magnetic moments, which exceed free ion values, arising from matrix polarisation of the host material have been reported in some rare earth-doped dilute magnetic semiconductors, such as Eu-doped GaN [65] and Gd-doped GaN [66], where in case of Gd doping effective magnetic moments of 4000 µ B have been reported. Investigations into the local electronic structures of the rare earth dopants in 3D TIs using extended x-ray absorption fine structure (EXAFS) may be useful in revealing the origin of these discrepancies, especially if they are related to differences in electronic configuration.…”
Section: Discussionmentioning
confidence: 99%
“…On the other hand, samples with Dy concentrations of x < 0.055 exhibited magnetic moments that were larger than expected which may be related to additional contributions arising from a spin polarisation of the Bi 2 Te 3 matrix by the Dy atoms. Giant magnetic moments, which exceed free ion values, arising from matrix polarisation of the host material have been reported in some rare earth-doped dilute magnetic semiconductors, such as Eu-doped GaN [65] and Gd-doped GaN [66], where in case of Gd doping effective magnetic moments of 4000 µ B have been reported. Investigations into the local electronic structures of the rare earth dopants in 3D TIs using extended x-ray absorption fine structure (EXAFS) may be useful in revealing the origin of these discrepancies, especially if they are related to differences in electronic configuration.…”
Section: Discussionmentioning
confidence: 99%
“…[48][49][50][51][52][53][54][55][56] For the mixed solvent system of octadecylamine, oleic acid and water, different rareearth ions (La 3+ , Ce 3+ , Nd 3+ , Eu 3+ , Gd 3+ , Tb 3+ , Er 3+ , Tm 3+ , Yb 3+ , etc.) and F − ions are chosen as doping ions.…”
Section: Rare-earth Doped Fhap Nano-spindles And/or Nanowiresmentioning
confidence: 99%
“…The existence of non-magnetic elements Gd 3+ or La 3+ with magnetic iron molybdates should either increase or decrease the net magnetic moment through exchange interaction. Kachkanov et al [17] reported that, although most of the trivalent rare-earth ions exhibit a lack of magnetic moment at room temperature, an induced magnetic moment has been detected in Eu 3+ ions doped with non magnetic GaN. Hughes et al [18] reported that, via an indirect exchange interaction, the localized magnetic moments of the rare earth elements were coupled using chemically inert 4f electrons, resulting in a wide magnetism range.…”
Section: Introductionmentioning
confidence: 97%