Inelastic electron tunneling spectroscopy

Reed, Mark A.

doi:10.1016/s1369-7021(08)70238-4

Cited by 98 publications

(73 citation statements)

References 43 publications

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“…In the low voltage region [ Fig. 2(a)], the normalized (d 2 I/dV 2 )/(dI/dV ) amplitude is more intense than what is usually achieved by IETS with local probes [20][21][22][23] and in tunnel junctions [39][40][41], where typical peak intensities are at best of the order of 1-3 V −1 . In the present case amplitudes higher than 5 V −1 have been achieved in the low voltage range, where the conductance suppression occurs.…”

Section: Aq Junctions Transport Measurementsmentioning

confidence: 98%

“…For single molecule devices weakly coupled to the electrodes, spectroscopy of vibrational modes as a function of gate voltage has been reported in the Coulomb blockade regime * maria-luisa.della-rocca@univ-paris-diderot.fr [14][15][16][17][18][19]. However, for the case of molecules strongly coupled to the leads, such as in the quantum interference regime, IETS remains a better spectroscopic tool [20][21][22][23][24][25][26][27]. Recent theoretical works have calculated the inelastic contributions to the current in the presence of QI [28] and have explored propensity rules that can play a role in this case [29,30].…”

Section: Introductionmentioning

confidence: 99%

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Inelastic electron tunneling spectroscopy in molecular junctions showing quantum interference

et al. 2017

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Destructive quantum interference effect is implemented in large area molecular junctions to improve signatures of electron-phonon interaction. Vertical molecular junctions based on a cross-conjugated anthraquinone layer were fabricated and low-noise transport measurements were performed by acquiring simultaneously the current-voltage characteristics, its second derivative, and the differential conductance. Signatures of vibrational modes excited by inelastic events are present in the whole measured voltage range and superpose to the conductance suppression induced by destructive quantum interference. As a consequence vibrational modes have improved visibility in the low energy window (<80 meV). Inelastic electron transport spectroscopy data are compared to infrared attenuated total reflection spectroscopy on Au/anthraquinone thin films. Common vibrational modes can be clearly identified, but inelastic electron tunneling spectroscopy reveals the existence of vibrational modes in a wider energy range (0-400 meV) where infrared spectroscopy is lacking.

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Section: Aq Junctions Transport Measurementsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Inelastic electron tunneling spectroscopy in molecular junctions showing quantum interference

et al. 2017

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“…7. This type of analysis, inelastic electron tunneling spectroscopy (IETS) [47][48][49] , has been demonstrated to provide fundamental microscopic information on electron-vibration coupling in transport experiments, see e.g. Refs.…”

Section: Anharmonic Molecular Oscillatorsmentioning

confidence: 99%

Effects of vibrational anharmonicity on molecular electronic conduction and thermoelectric efficiency

Friedman

Agarwalla

Segal

2016

The Journal of Chemical Physics

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We study inelastic vibration-assisted charge transfer effects in two-site molecular junctions, focusing on signatures of vibrational anharmonicity on the electrical characteristics and the thermoelectric response of the junction. We consider three types of oscillators: harmonic, anharmonic-Morse allowing bond dissociation, and harmonic-quartic, mimicking a confinement potential. Using a quantum master equation method which is perturbative in the electron-vibration interaction we find that the (inelastic) electrical and thermal conductances can be largely affected by the nature of the vibrational potential. In contrast, the Seebeck coefficient, the thermoelectric figure-of-merit, and the thermoelectric efficiency beyond linear response, conceal this information, showing a rather weak sensitivity to vibrational anharmonicity. Our work illustrates that anharmonic (many-body) effects, consequential to the current-voltage characteristics, are of little effect for the thermoelectric performance.

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“…Electronic nanogaps with gapwidths in the sub-5 nm range are particularly interesting as they are suitable for embedding and probing molecules to investigate electron transport mechanisms and strong light-matter interactions on a molecular-level. In addition, electrodes separated by sub-2 nm wide gaps can be operated as tunneling junctions that have manifold potential applications such as DNA sequencing, quantum computing, RF and optical emitters 4,[8][9][10][11] . However, it remains extremely challenging to fabricate large numbers of nanogap electrodes featuring gap-widths below 5 nm in a reliable and efficient way.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of crack-junctions

2017

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Nanogap electrodes consist of pairs of electrically conducting tips that exhibit nanoscale gaps. They are building blocks for a variety of applications in quantum electronics, nanophotonics, plasmonics, nanopore sequencing, molecular electronics, and molecular sensing. Crack-junctions (CJs) constitute a new class of nanogap electrodes that are formed by controlled fracture of suspended bridge structures fabricated in an electrically conducting thin film under residual tensile stress. Key advantages of the CJ methodology over alternative technologies are that CJs can be fabricated with wafer-scale processes, and that the width of each individual nanogap can be precisely controlled in a range from o 2 to 4100 nm. While the realization of CJs has been demonstrated in initial experiments, the impact of the different design parameters on the resulting CJs has not yet been studied. Here we investigate the influence of design parameters such as the dimensions and shape of the notches, the length of the electrode-bridge and the design of the anchors, on the formation and propagation of cracks and on the resulting features of the CJs. We verify that the design criteria yields accurate prediction of crack formation in electrode-bridges featuring a beam width of 280 nm and beam lengths ranging from 1 to 1.8 μm. We further present design as well as experimental guidelines for the fabrication of CJs and propose an approach to initiate crack formation after release etching of the suspended electrode-bridge, thereby enabling the realization of CJs with pristine electrode surfaces.

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Inelastic electron tunneling spectroscopy

Cited by 98 publications

References 43 publications

Inelastic electron tunneling spectroscopy in molecular junctions showing quantum interference

Inelastic electron tunneling spectroscopy in molecular junctions showing quantum interference

Effects of vibrational anharmonicity on molecular electronic conduction and thermoelectric efficiency

Design and fabrication of crack-junctions

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