Inelastic Electron Tunneling Spectroscopy at High‐Temperatures

Abstract

Raman-active transitions. Even the optically forbidden regions that are inaccessible to IR and Raman spectroscopy are open to IETS, [2,8] making it a promising technique for solid-state ionics. If available, it would open the door to monitoring the simultaneous propagation of one or several particle species in solids separately and in real time. IETS is widely used with great success as a spectroscopy technique for scanning tunneling micro scopy. [5,9,13,14] This variant of IETS is called inelastic scanning tunneling spectroscopy. We focus here on IETS performed by using planar tunnel junctions, which offer multichannel, on-chip integration. Despite all these attractive properties, IETS has been disregarded as a technique in solid-state ionics to analyze particle motion because the temperatures necessary to study diffusion processes are high, usually well exceeding 300 K. These temperatures were under

Inelastic Tunneling Spectroscopy-Based Electronic Tongue for Heavy Metal-Ion Detection

“…Moreover, our results also clearly indicate selective detection of the two ions when the MIS device is exposed to a combined solution of both the salts. It has been predicted, by our group and others, that quantum structures have the potential to achieve room-temperature IETS through energy filtering; , there has also been a recent experimental hint thereof . Further, we have shown that numerical algorithms for low noise differentiation can enable the extraction of IET spectra with far simpler hardware than the standard IETS measurement setup of today .…”

The Luminescence Hypothesis of Olfaction

“…The physical viability has been discussed with the reasoning that the donor electron must come from an amino acid of the receptor and was evaluated using calculated values for the Huang–Rhys factors of electron–phonon coupling for vibrational modes [ 16 ]. It is known that the operating principle of IET requires a linear geometry of the locations on the OR [ 17 ]. The energy transitions between particular OR protein residues comprising the walls of the OR have been studied [ 18 ].…”

Room Temperature Quantum Control of N‐Donor Electrons at Si/SiO2Interface

“…For instance, the deteriorating effect of increased thermal noise on the effective single electron tunneling rate and overall device performance, in Si‐based systems, at elevated temperature. [ 33–35 ] To address the challenges associated with high‐temperature single electron shuttling, recent studies have explored various strategies. These include dielectric and quantum confinement, [ 36 ] multi‐dopant cluster, [ 37 ] different double donors, [ 29,38 ] and donor‐vacancy interaction to mitigate the impact of thermal noise.…”