Influence of a Ni buffer layer on the optical and electrical properties of GZO/Ni bi-layered films

Jeon, Jae-Hyun; Gong, Tae-Kyung; Kim, Sun-Kyung; Kim, Seung-Hong; Kim, Soyoung; Choi, Dong‐Hyuk; Son, Donghoon; Kim, Daeil

doi:10.1016/j.jallcom.2015.02.123

Cited by 8 publications

(3 citation statements)

References 11 publications

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“…Thus, the main reason for the higher electrical conductivities of the ZnO/GZO thin films resulted from larger carrier mobility. Furthermore, to further explore the effects of a buffer layer on mobility, a large amount of experimental data, including unbuffered and buffered ZnO‐based films, was collected from this study and other literature, 7,13,16,22‐24 as shown in Figure 5D. It can be concluded that higher mobility was usually obtained in buffered films when compared with unbuffered films for the same or similar carrier concentration, indicating that a buffer layer can indeed improve the carrier mobility for thin films.…”

Section: Resultsmentioning

confidence: 84%

“…(A) Electrical conductivity; (B) Seebeck coefficient; (C) Room‐temperature Hall measurement results, including carrier concentration and Hall mobility, alongside the calculated DOS effective mass of all the thin films; and (D) a collection plot showing the carrier concentration and Hall mobility for thin films from this study and the literature 7,13,16,22‐24 [Color figure can be viewed at wileyonlinelibrary.com]…”

Section: Resultsmentioning

confidence: 99%

“…Inserting a buffer layer has been investigated as an effective method to reduce the stress, enhance the crystalline quality, and eliminate grain boundary scattering and defects between the thin film and substrate. [12][13][14] In previous studies, many kinds of materials have been used as buffer layers for ZnO-based thin films such as TiO 2 , 15 Ni, 16 SiO x , 17 ZnO, 18,19 and so on. Most of these studies focused on the influence of the buffer layer on the optical properties, crystal quality, or room-temperature electrical properties.…”

Section: Introductionmentioning

confidence: 99%

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High thermoelectric performance of high‐mobility Ga‐doped ZnO films via homogenous interface design

Zhou

Zou

et al. 2021

J. Am. Ceram. Soc.

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Ga-doped ZnO (GZO) thin films grown on sapphire substrates have been widely investigated as a promising transparent thermoelectric (TE) material. However, due to the large lattice mismatch and thermal expansion between the sapphire substrate and GZO film, strain-induced lattice distortion impedes the transport of electrons, leading to low carrier mobility. In this study, ZnO homo-buffer layers with different thicknesses were inserted between sapphire substrates and GZO films, and their effect on the TE properties was investigated. A thin ZnO interlayer (10 nm) effectively reduced the lattice mismatch of the GZO film and improved the carrier mobility, which contributed to the large enhancement in the electrical conductivity. Simultaneously, energy filtering occurred at the interface between GZO and ZnO, resulting in a relatively high density of states (DOS) effective mass and maintaining a high Seebeck coefficient compared to that of the unbuffered GZO films. Consequently, the GZO film with a 10 nm thick ZnO buffer layer possessed a high power factor value of 449 μW m −1 K −2 at 623 K. This study provides a facile and effective method for optimizing the TE performance of oxide thin films by synergistically improving their carrier mobility and enhancing their effective mass.

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Section: Resultsmentioning

confidence: 84%