“…Based on former studies linked to this present work, our research group epitaxially manufactured the Fe 3 Si films onto Si ((111)-orientation) wafers using the FTS [ 1 , 2 ]. The FTS layout comprises a couple of sputtering targets set far from a substrate holder while both targets face each other allowing the magnetic confinement to occur [ [12] , [13] , [14] , [15] ]. This setup allows the machine to produce high-density plasma under low pressure and minimize the plasma damage, to create a seamless film with miniscule stoichiometry error [ [12] , [13] , [14] , [15] ].…”