1999
DOI: 10.1016/s0040-6090(98)01667-8
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Influence of B- and N-doping levels on the quality and morphology of CVD diamond

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Cited by 25 publications
(9 citation statements)
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“…It should be recalled that the main consequence of nitrogen or boron incorporation is to change the morphology and defect content of the films 23, 24, which are responsible for the thermally stimulated luminescence (TL), current (TSC), and exoelectronic emission (TSEE) associated with defect formation during growing and localized levels within the gap 25, 26. The presence of structural defects and compositional impurities, which, of course, depend on the growth conditions, strongly affects the charge transport, collection efficiency and trapping population, and causes evident effects on the TL glow curve.…”
Section: Resultsmentioning
confidence: 99%
“…It should be recalled that the main consequence of nitrogen or boron incorporation is to change the morphology and defect content of the films 23, 24, which are responsible for the thermally stimulated luminescence (TL), current (TSC), and exoelectronic emission (TSEE) associated with defect formation during growing and localized levels within the gap 25, 26. The presence of structural defects and compositional impurities, which, of course, depend on the growth conditions, strongly affects the charge transport, collection efficiency and trapping population, and causes evident effects on the TL glow curve.…”
Section: Resultsmentioning
confidence: 99%
“…It has been also reported that small amounts of nitrogen are able to stabilize the v100w texture of the growing film. 77 The remarkable difference between the reactivity of C-and N-containing species at the growing diamond surface has been further emphasized by Eccles et al 78 who reported on the doping efficiencies of both boron and nitrogen. While a doping efficiency close to unity was found for the former, an upper estimate of as low as 10 23 was made for the latter.…”
Section: ''Hot Filament'' Cvdmentioning
confidence: 99%
“…p-type diamond, since almost all added nitrogen remains Consistent with this view, the m/e=28 signal is found as gas-phase N 2 . Diamond films grown using this gas at power levels where the NH 3 and CH 4 signals are mixture with N 2 concentrations of 0-4.7% were examfalling, yet where the HCN mole fraction is rising, as ined for incorporated nitrogen by the technique of would be expected for an intermediate in the conversion secondary ion mass spectrometry (SIMS ) [16 ]. In of CH 4 and NH 3 to HCN.…”
Section: Introductionmentioning
confidence: 99%