Influence of experimental conditions on conductivity of electrospun nanocomposite fibers

Phadkule, Saket Sanjay; Singh, Shivam; Sarma, S. Das

doi:10.1016/j.matpr.2022.11.244

Cited by 2 publications

(1 citation statement)

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“…Endurance refers to the ability of a memristor to endure or sustain repeated switching cycles without significant degradation or loss of performance. It is particularly important because the repeated switching cycles can introduce various physical phenomena such as electromigration, thermal effects, material fatigue, and degradation of the memristor, [ 53,54 ] leading to changes in the memristor's resistance or conductance, resulting in variations in its behavior and potential failure.…”

Section: Resultsmentioning

confidence: 99%

Perovskite Thin Single Crystal for a High Performance and Long Endurance Memristor

Fernandez‐Guillen,

Aranda,

Betancur

et al. 2024

Adv Elect Materials

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Metal halide perovskites (MHPs) exhibit electronic and ionic characteristics suitable for memristors. However, polycrystalline thin film perovskite memristors often suffer from reliability issues due to grain boundaries, while bulk single‐crystal perovskite memristors struggle to achieve high LRS/HRS ratios. In this study, a single crystal memristive device utilizing a wide bandgap perovskite is introduced, MAPbBr3, in a high surface/thickness configuration. This thin single crystal overcomes these challenges, exhibiting a remarkable LRS/HRS ratio of up to 50 and endurance of 103 cycles, representing one of the highest reported values to date. This exceptional stability enables to analyze the electroforming process and LRS through impedance spectroscopy, providing insights into the underlying operational mechanism. As far as it is known, this is the first reported thin single‐crystal MHP memristor device and the first time that the electroforming process is recorded through impedance spectroscopy. This device's outstanding stability and performance position it as a promising candidate for high‐density data storage and neuromorphic applications.

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Section: Resultsmentioning

confidence: 99%