1997
DOI: 10.1063/1.366200
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Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal–oxide–semiconductor field-effect transistors

Abstract: The amplitude of random telegraph signals (RTS) in an n-channel metal–oxide–semiconductor field-effect transistor has been investigated. Current fluctuations originating when a single-channel electron is trapped or detrapped in the silicon dioxide have been evaluated. A simulation has been performed where the inversion-layer quantization, the dependence of the electron mobility on the transverse and longitudinal electric fields, and the influence of the oxide charges on free-carrier density and on electron mob… Show more

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Cited by 14 publications
(6 citation statements)
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“…Depending on the device geometry a single [76] or few discrete charges [77] trapped in hot carrier or radiation created defect states will be sufficient to cause a pronounced degradation in decananometer MOSFETs. However, the modeling and simulation efforts are mainly restricted to simple analytical models [68], [78] and 2-D numerical simulation studies [79] and, for example, fall short of explaining the wide range of RTS amplitudes observed in otherwise identical devices [80]. There are suggestions that strategically located traps influence the magnitude and the spreading of RTS amplitudes due to surface potential fluctuations and channel nonuniformity [73], [74], [80].…”
Section: B Single Charge Trappingmentioning
confidence: 99%
“…Depending on the device geometry a single [76] or few discrete charges [77] trapped in hot carrier or radiation created defect states will be sufficient to cause a pronounced degradation in decananometer MOSFETs. However, the modeling and simulation efforts are mainly restricted to simple analytical models [68], [78] and 2-D numerical simulation studies [79] and, for example, fall short of explaining the wide range of RTS amplitudes observed in otherwise identical devices [80]. There are suggestions that strategically located traps influence the magnitude and the spreading of RTS amplitudes due to surface potential fluctuations and channel nonuniformity [73], [74], [80].…”
Section: B Single Charge Trappingmentioning
confidence: 99%
“…Modeling and simulation can help to forecast the RTS amplitudes that should be expected in decananometer devices. However, the modeling and simulation efforts are mainly restricted to simple analytical models [5], [18] and 2-D numerical simulation studies [19] and, for example, fall short of explaining the wide range of RTS amplitudes observed in otherwise identical devices [20] and particularly their statistical distribution. There are suggestions that due to surface potential fluctuations and channel nonuniformity strategically located traps influence the magnitude and the spreading of RTS amplitudes [10], [11], [20].…”
mentioning
confidence: 99%
“…Here, f 0 = 1/(2πτ), 1/τ = 1/τ c + 1/τ e , and k = 4τ 2 V 2 DS /(τ c +τ e ). V DS is computed with the user-provided parameters α 0 and α 1 , which are readily available in the literature if the specific values are unknown [40], [41].…”
Section: Rts Modeling and Simulationmentioning
confidence: 99%