Influence of Quantizing Magnetic Field on the Effective Electron Mass in Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory and Relative Assessment

Abstract

In this paper we study the influence of quantizing magnetic field on the effective electron mass (EEM) in nonlinear optical materials on the basis of a newly formulated electron dispersion law by considering all types of anisotropies of the energy band constants within the framework of k.p. formalism. The results for III-V, ternary and quaternary materials form special case of our generalized analysis. We have also studied the EEM in II-VI, bismuth, IV-VI, stressed, Te, GaP, PtSb 2 , Bi 2 Te 3 , Ge, GaSb and II-V semiconductors by formulating the appropriate magneto dispersion law in each case. It has been found that the magneto EEM in nonlinear optical materials depends on the magnetic quantum number due to the combined influence of the crystal field splitting constant and the anisotropic spin-orbit splitting. The same mass in Bi and Ge depends on both the magnetic quantum number and the Fermi-energy due to the presence of band non-parabolicity only and for stressed materials stress makes the mass quantum number dependent. The EEM in Te, GaP, PtSb 2 and II-V semiconductors depend on the magnetic quantum number, which is the characteristic feature of the same material. The EEM is an oscillatory function of inverse quantizing magnetic field due to SdH effect and increases with increasing concentration and exhibits a periodic variation with the direction of the quantizing magnetic field in the appropriate cases. Under certain special conditions all the results for all the materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test.