Influence of structural and doping parameter variations on Si and 
                
                  
                
                $$\hbox {Si}_{1-x}$$
                
                  
                    
                      Si
                      
                        1
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                        x
                      
                    
                  
                
               
                
                  
                
                $$\hbo

In this paper, a comprehensive comparison of TFET simulations using two TCAD simulators, Sentaurus and Silvaco TCAD, is presented. The comparison is fully cover various types of TFETs, either from the structure geometry or the materials point of view, which proved a framework for TFET designs and simulations. For Sentaurus TCAD, a dynamic nonlocal BTBT model is used for all simulations as it is proved a good calibration for experimental data or full quantum data taken from the literature. The BTBT model’s parameters are determined for different material and hetero-junctions structures where they can be used directly for any design or structure calibration. For the Silvaco simulator, a nonlocal BTBT model is utilized for calibration and its parameters are also provided. The study offers quick parameters data to be used directly, utilizing various materials without being involved in calibration difficulties.

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Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD

Nabil

Shaker

Abouelatta

et al. 2020

J. Phys.: Conf. Ser.

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Influence of structural and doping parameter variations on Si and $$\hbox {Si}_{1-x}$$ Si 1 - x $$\hbo

Cited by 1 publication

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Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD

Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD

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