Infrared ellipsometry on hexagonal and cubic boron nitride thin films

Franke, E.; Neumann, H.; Schubert, M.; Tiwald, Thomas E.; Woollam, John A.; Hahn, J.

doi:10.1063/1.118655

Cited by 19 publications

(12 citation statements)

References 15 publications

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“…A more detailed discussion of the microstructure affected infrared optical properties of BN thin films and their spectroscopic ellipsometry characterization will be given elsewhere. 36,38 The large broadening of the TOЌ peak in h-BN2 can be explained as due to very small grain sizes, as proven by HRTEM and SAD measurements. A strong LO phonon mode resonance is excited at ϭ LOʈ in sample h-BN1 and only a small signal due to the TO mode ( TOʈ ) can be observed.…”

Section: B Irse Resultsmentioning

confidence: 86%

“…͑1͒, where n o,eff 2 ϭ o,eff and n e,eff 2 ϭ e,eff are for DF for polarization parallel and perpendicular to the film normal, and n ʈ 2 ϭ ʈ and n Ќ 2 ϭ Ќ are the DF for polarization parallel and perpendicular to the bulk h-BN c axis, respectively. 36 As well, the high c-BN content thin-film DF can be described by the same EMA model ͓Eq. ͑2͔͒ which is used for the thin-film visible-light refractive indices.…”

Section: B Irse Resultsmentioning

confidence: 98%

“…The double LO mode resonance in ⌿ at Х1600 cm Ϫ1 is due to the difference in grain c-axis orientations between the nucleation layer and the randomly averaged ͑isotropic͒ h-BN material at the grain boundaries, i.e., two spectrally separated h-BN LO phonons excited within the nucleation layer and the high c-BN content layer, respectively. 36,38 The c-BN and h-BN TO modes are shown by insets. The c-BN lattice resonance frequencies TOc ϳ1070 cm Ϫ1 , LOc ϳ1300 cm Ϫ1 obtained from the best fit are in good agreement with bulk data.…”

Section: B Irse Resultsmentioning

confidence: 99%

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Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Franke

Schubert

Neumann

et al. 1997

Journal of Applied Physics

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Frank, "Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range" (1997 Spectroscopic ellipsometry over the spectral range from 700 to 3000 cm Ϫ1 and from 1.5 to 3.5 eV is used to simultaneously determine phase and microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering on ͑100͒ silicon. The results are obtained from a single microstructure-dependent model for both infrared and visible-light thin-film anisotropic dielectric functions. The optical behavior of high c-BN content thin films is described by an effective medium approximation. We obtain the amount of h-BN within high c-BN content thin films. A thin oriented nucleation layer between the silicon substrate and the high c-BN content layer is demonstrated. The preferential arrangement of the grain c axes within the h-BN thin films are found to be dependent on the growth parameters. The results from the infrared and visible spectral range ellipsometry model are compared to each other and found to be highly consistent. © 1997 American Institute of Physics. ͓S0021-8979͑97͒06618-8͔

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Section: B Irse Resultsmentioning

confidence: 86%

Section: B Irse Resultsmentioning

confidence: 98%

Section: B Irse Resultsmentioning

confidence: 99%

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Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Franke

Schubert

Neumann

et al. 1997

Journal of Applied Physics

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“…The high c-BN content layers consist of a phase composite of pure c-BN and randomly oriented ͑isotropic͒ h-BN. 12 Such samples have already been studied by gVASE in the VIS spectral range, resulting in VIS optical constants. 7 It was found that the h-BN thin films possess an effective optical axis perpendicular to the sample surface.…”

Section: Methodsmentioning

confidence: 99%

“…11 However, the h-BN microstructure particularly affects the sample reflectivity behavior as well. 12 The latter needs to be considered when analyzing infrared reflectivity data; otherwise it leads to ambiguous results.…”

Section: Introductionmentioning

confidence: 99%

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

et al. 1997

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Schubert, Mathias; Rheinlander, B.; Franke, E.; Neumann, H.; Tiwald, T. E.; and Woollam, John A., "Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example" (1997 We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixedphase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000 cm Ϫ1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto ͑100͒ silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material. ͓S0163-1829͑97͒08244-1͔

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Boron nitride (BN) phonon wavenumbers and frequencies

Landolt-Börnstein - Group III Condensed Matter

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Infrared ellipsometry on hexagonal and cubic boron nitride thin films

Cited by 19 publications

References 15 publications

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

Boron nitride (BN) phonon wavenumbers and frequencies

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