Infrared reflection absorption study of water interaction with H-terminated Si(100) surfaces

Rao, G. Ranga

doi:10.1007/bf02707275

Cited by 8 publications

(3 citation statements)

References 26 publications

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“…The spectra collected at 74° incidence also exhibited peaks at 3620, 1294, 920, and 836 cm –1 . The signal at 3620 cm –1 indicated O–H stretching, while the signals at 920 and 836 cm –1 were characteristic of O–H bending and Si–O stretching, respectively. − The signal at 1294 cm –1 was tentatively assigned to O–H stretching coupled with O–H bending, following the analogous signal observed at 1080 cm –1 for methoxylated Si(111) surfaces that arises from O–C stretching coupled with CH 3 rocking . The observed signals suggested that a significant portion of the surface was hydroxylated and contained Si–OH functionality.…”

Section: Resultsmentioning

confidence: 90%

“…TIR spectra (Figure ) exhibited peaks ascribable to Si–OH vibrational modes, with the Si–O bond oriented perpendicular to the surface. − , The O–H stretching signal exhibited a reduced intensity at 30° incidence, suggesting that the transition was polarized perpendicular to the surface. However, the proposed geometry of a surface-bound Si–O–H group would be expected to have a significant component of the O–H stretch oriented parallel to the surface.…”

Section: Discussionmentioning

confidence: 99%

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Synthesis, Characterization, and Reactivity of Ethynyl- and Propynyl-Terminated Si(111) Surfaces

Plymale¹,

Kim²,

Soriaga

et al. 2015

J. Phys. Chem. C

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A. Supporting Experimental Details. Surfaces. Wafers were cut with a diamondtipped scribe to the desired size and then rinsed sequentially with water, methanol (≥99.8%, EMD), acetone (≥99.5%, EMD), methanol, and water. Organic contaminants were removed and the surfaces were oxidized by immersing the wafers in a freshly prepared piranha solution (1:3 v/v of 30% H 2 O 2 (aq) (EMD): 18 M H 2 SO 4 (EMD)) at 90-95 °C for 10-15 min. The wafers were rinsed with copious amounts of water and immersed in buffered HF(aq) (semiconductor grade, Transene Co., Inc.) for 18 s followed by another water rinse. Atomically flat H-Si (111) surfaces were prepared by immersing the wafers in an Ar(g)-purged solution of NH 4 F(aq). Preparation of Atomically 1-2Wafers with a miscut angle of 0.5° were etched for 5.5 min, while wafers with a miscut angle of 0.1° were etched for 9.0 min to obtain optimal terrace size. The solution was purged throughout the etching process and the wafers were agitated after each minute of etching to remove bubbles S2 that formed on the surface. After etching, the wafers were rinsed with water and dried under a stream of Ar(g). Surfaces. Cl-Si(111) surfaces were prepared inside a N 2 (g)-purged glovebox with <10 ppm O 2 . A saturated solution of PCl 5 (≥99.998% metal basis, Alfa Aesar) in chlorobenzene (anhydrous, ≥99.8%, Sigma-Aldrich) was preheated with an initiating amount (<1 mg mL -1 ) of benzoyl peroxide (≥98%, Sigma-Aldrich) for 1-2 min. The H-Si (111) wafers were rinsed with chlorobenzene and then reacted in the PCl 5 solution at 90 ± 2 °C for 45 min. 1,3 Upon completion of the reaction, the solution was drained and the wafers were rinsed with copious amounts of chlorobenzene, followed by tetrahydrofuran (THF, anhydrous, inhibitor-free, ≥99.9%, Sigma-Aldrich). Surfaces. Br-Si(111) surfaces were prepared by reaction under ambient light at 22 °C of H-Si(111) with Br 2 (g) in a drying chamber connected to a vacuum line as well as to a reservoir of Br 2 (l). Immediately after anisotropic etching, H-Si (111) samples were placed inside the drying chamber, which was then evacuated to <20 mTorr. The sample was sealed under vacuum and the Br 2 (l) reservoir was quickly opened and closed to allow a visible amount of Br 2 (g) into the evacuated drying chamber. The reaction was allowed to proceed for 10 s, after which the Br 2 (g) was removed by vacuum to a pressure of <20 mTorr. Preparation of Preparation of of 2, 4The sample was sealed under vacuum and transferred to a N 2 (g)-purged glovebox.B. Supporting Instrumentation Details. Transmission Infrared Spectroscopy.A custom attachment allowed Si samples (1.3 × 3.2 cm) to be mounted such that the incident IR beam was either 74° or 30° with respect to the sample surface normal. At 74° (Brewster's angle for Si), IR modes parallel and perpendicular to the surface are observed, and at 30°, parallel modes remain visible, while perpendicular modes S3 are greatly diminished in intensity. 5 Reported spectra are averages of 1500 consecutive scans collected at a resolu...

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Section: Resultsmentioning

confidence: 90%

Section: Discussionmentioning

confidence: 99%

Synthesis, Characterization, and Reactivity of Ethynyl- and Propynyl-Terminated Si(111) Surfaces

Plymale¹,

Kim²,

Soriaga

et al. 2015

J. Phys. Chem. C

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show abstract

“…Meanwhile, a large number of studies have been reported on individual water molecules adsorbed on well-defined silicon surfaces using cutting-edge analytical methods in surface science [8][9][10]. To our knowledge, however, the WCA measurement has not been applied to the well-defined silicon surfaces prepared by ultrahigh vacuum (UHV) techniques, possibly because of incompatibility between water droplets and UHV environments.…”

Section: Introductionmentioning

confidence: 98%

Water wettability of Si(1 1 1) and (0 0 1) surfaces prepared to be reconstructed, atomic-hydrogen terminated and thinly oxidized in an ultrahigh vacuum chamber

Miyagi

Sasahara

Tomitori

2015

Applied Surface Science

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Modulation of Agglomeration of Vertical Porous Silicon Nanowires and the Effect on Gas‐Sensing Response

Qin

Zhao

2017

Adv Eng Mater

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Porous silicon nanowires (PSiNWs) array is a promising material for development of integrated gas sensors operating at room temperature. This work reports the fabrication of PSiNWs assembly with different structural features and its effect on gas-sensing performance. Bundling and well separating PSiNWs arrays are fabricated by MACE method, respectively, based on the effective modulation of surface wettability of the initial Si substrate. The HF pretreatment creates a hydrophobic surface favorable for deposition of irregular Ag nanoflakes and then for the formation of bundling PSiNWs array. In contrast, the PSiNWs with well lateral separation are formed based on the predeposited uniform Ag nanoparticles on a hydrophilic Si surface. The PSiNWs array featured by tip-clusters is proved to be highly effective in achieving highly sensitive and rapid response to NO 2 gas at room temperature. Satisfying dynamic characteristic and selectivity are meanwhile observed for the bundling array. The formation of the bundling or separating of PSiNWs is discussed in terms of the force balance of individual nanowire, which is further correlated with non-uniform distribution of Ag nanoclusters caused by H-termination. Meanwhile, high sensing performance of bundling nanowires is analyzed based on the structural promotion of the unique configuration of tip-cluster to sensing response.

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Infrared reflection absorption study of water interaction with H-terminated Si(100) surfaces

Cited by 8 publications

References 26 publications

Synthesis, Characterization, and Reactivity of Ethynyl- and Propynyl-Terminated Si(111) Surfaces

Synthesis, Characterization, and Reactivity of Ethynyl- and Propynyl-Terminated Si(111) Surfaces

Water wettability of Si(1 1 1) and (0 0 1) surfaces prepared to be reconstructed, atomic-hydrogen terminated and thinly oxidized in an ultrahigh vacuum chamber

Modulation of Agglomeration of Vertical Porous Silicon Nanowires and the Effect on Gas‐Sensing Response

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