Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon

Abstract

This paper presents the results of the infrared spectroscopic study of silicon carbide epitaxial layers grown by the substitution of atoms on the surface of single-crystal silicon. It has been found that, in the infrared spectra, there is a band at 798 cm -1 , which corresponds to a transverse optical (TO) phonon in the lattice of silicon carbide. The parameters of disordered silicon carbide on the surface of pores between the epitaxial layer of silicon carbide and the silicon substrate have been determined. It has been revealed that, in the infrared spectra of silicon carbide, there is a band in the wavenumber range of 960 cm -1 . A hypothesis has been proposed, according to which this band corresponds to the energy of the previously theoretically predicted elastic dipole consisting of an elastically interacting carbon atom located in an interstitial position and a silicon vacancy.

Use of powder silicon as a photocurable resin filler for laser stereolithography and prospects for transforming stereolithographic parts with silicon from polymeric to ceramic ones.

“…Thus, the primary annealing process carried out in this way can be considered as oxygen-depleted annealing, at least at the initial stage of the process. It is our belief that this fact led not only to the already expected formation of silicon oxide SiO 2 (peak 619 cm -1 , double peak 1066 and 1094 cm -1 , small peak 1200 cm -1 )[8][9][10][11][12][13][14][15], with the primary annealing temperature increase to 1100 ºC (Fig. 6), but also to the reaction of silicon with the products of incomplete polymer combustion, and, as a result, to the formation of silicon carbide SiC (790 cm -1 )[9,16,17].…”