Infrared spectroscopy on electronic structures of platinum-group metal pernitrides MN2 (M = Ru, Rh, Ir, and Pt)

Soda, Kazuo; Komabuchi, Mai; Maeguchi, Keisuke; Katô, Masahiko; Terabe, Toshiki; Niwa, Ken; Hasegawa, Masashi; Ikemoto, Yuka; Okamura, Hidekazu

doi:10.1016/j.physb.2019.01.017

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…The synthesis of nitrogen-rich bulk TMN 2 requires relatively high conditions such as high pressure [127][128][129][130][131][132][133][134]. As a result, the current research on 2D TMN 2 mainly stays in the stage of theoretical prediction [135][136][137][138].…”

Section: D Tmnmentioning

confidence: 99%

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

et al. 2022

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The two-dimensional (2D) metal nitrides (MNs), including group IIA nitrides, group IIIA nitrides, nitride MXene and other transition metal nitrides, exhibit unique electronic and magnetic characteristics. The 2D MNs have been widely studied by experimental and computational approaches and some of them have been synthesized. Herein we systematically reviewed the structural, electronic, thermal, mechanical, magnetic and optical properties of the 2D MNs that have been reported in recent years. Based on their unique properties, the related applications of 2D MNs on fields like electronics, spintronics, sensing, catalysis, and energy storage were discusszed. Additionally, the lattice structures and synthetic routes were also summarized as supplements of the research progress of 2D MNs family. Furthermore, we provided insights into the research prospects and future efforts that need to be made on 2D MNs.

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Section: D Tmnmentioning

confidence: 99%

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

et al. 2022

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High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride

et al. 2022

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A polycrystalline platinum pernitride (PtN2) thin-film was successfully synthesized via nitridation of a platinum thin-film deposited on α-Al2O3 substrate at the pressure of ∼50 GPa by using the laser-heated diamond anvil cell. The current–voltage characteristic and optical reflectance of the synthesized PtN2 thin-film were measured under ambient conditions. Combined with first-principles calculations, these experimental results have revealed that PtN2 exhibits semiconducting property with a bandgap of ∼2 eV. This high-pressure thin-film synthesis technique could also be applied for revealing the physical properties of other novel pernitrides synthesized under ultra-high pressure, which can offer new insights into the physical properties and functionality of the pernitrides and related nitrides.

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Electronic Structures of Transition-Metal Pernitrides Studied Using X-ray Absorption and Photoelectron Spectroscopy

et al. 2021

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Infrared spectroscopy on electronic structures of platinum-group metal pernitrides MN2 (M = Ru, Rh, Ir, and Pt)

Cited by 5 publications

References 23 publications

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride

Electronic Structures of Transition-Metal Pernitrides Studied Using X-ray Absorption and Photoelectron Spectroscopy

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