InGaN-based blue, green monolithic micro-LED display with n-type interlayer

Abstract

InGaN-based monolithic full-color light-emitting diodes (LEDs), such as augmented reality and virtual reality, are candidates for displays with highly integrated pixels. We demonstrated a monolithic micro-LED display with green- and blue-emitting active layers separated by an n-type interlayer. The interlayer plays an important role in individually emitting green and blue light. The monolithic LED display was fabricated by mesa formation reaching the interlayer and the regrowth of the p-type layer, resulting in horizontally integrated green and blue LEDs. The display measuring 0.64 mm2 with 20 rows and 20 columns had 40 µm × 40 µm pixels comprising 20 µm × 40 µm sub-pixels with an emitting area of 8 µm × 23 μm and was driven by a passive matrix circuit. Images of the monolithic micro-LED display were successfully obtained by individually controlling the green- and blue-emitting micro-LEDs. These results will enhance the commercialization of micro-LED displays.