InGaN/GaN multi-quantum well nanowires: Enhanced trace-level NO2 detection for environmental and breath analysis

Shanmugasundaram, Arunkumar; Johar, Muhammad Ali; Paeng, Changung; Jeong, Yun-Jin; Abdullah, Ameer; Park, Jongsung; Ryu, Sang-Wan; Yim, Changyong; Lee, Dong-Weon

doi:10.1016/j.cej.2024.152074

Cited by 2 publications

(1 citation statement)

References 83 publications

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“…InGaN binary and ternary compounds are important solids for modern optoelectronic devices (micro-LEDs, , room-temperature single photon emitters, high sensitive gas sensors, − etc.) due to their direct band gap and the possibility to tune the band gap energy from ∼0.7 to 3.4 eV.…”

Section: Introductionmentioning

confidence: 99%

Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy

Gridchin,

Kotlyar,

Ubyivovk

et al. 2024

ACS Appl. Nano Mater.

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A study on the formation of InGaN ternary compounds in the three-dimensional growth mode is presented. For the first time, we demonstrate that the self-organization during InGaN growth is responsible for the formation of core–shell nanowires (NWs), nanotubes, zinc blende (ZB) phases, and nanoflowers. It is found that the core–shell InGaN NWs are formed at the very initial stage of growth. An increase in growth time results in the ascending indium diffusion from the cores of NWs and their accumulation at the NW tips, enabling three-dimensional lateral growth and formation of nanotubes. Further nanostructure growth leads to the formation of nanoflowers with empty stems and ZB/wurtzite (WZ) phase interface at the periphery. The observed structural transformations of NWs are supported by transmission electron microscopy and photoluminescence measurements, as well as theoretical estimates. Understanding the formation mechanisms of these complex three-dimensional nanostructures can facilitate the development of InGaN compounds for gas-sensing applications.

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Section: Introductionmentioning

confidence: 99%

Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy

Gridchin,

Kotlyar,

Ubyivovk

et al. 2024

ACS Appl. Nano Mater.

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Recent Advances in the Growth and Compositional Modelling of III–V Nanowire Heterostructures

Leshchenko,

Sibirev

2024

Nanomaterials

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Nanowire heterostructures offer almost unlimited possibilities for the bandgap engineering and monolithic integration of III–V photonics with Si electronics. The growth and compositional modelling of III–V nanowire heterostructures provides new insight into the formation mechanisms and assists in the suppression of interfacial broadening and optimization of optical properties. Different models have been proposed in the past decade to calculate the interfacial profiles in axial nanowire heterostructures mainly grown by molecular beam epitaxy and metal–organic vapour phase epitaxy. Based on various assumptions, existing models have different sets of parameters and can yield varying results and conclusions. By focusing on deterministic models based on classical nucleation theory and kinetic growth theory of III–V ternary monolayers in nanowires, we summarize recent advancements in the modelling of axial heterostructures in III–V nanowires, describe and classify the existing models, and determine their applicability to predictive modelling and to the fitting of the available experimental data. In particular, we consider the coordinate-dependent generalizations of the equilibrium, nucleation-limited, kinetic, and regular growth models to make interfacial profiles across axial heterostructures in different III–V nanowires. We examine the factors influencing the interfacial abruptness, discuss the governing parameters, limitations, and modelling of particular material systems, and highlight the areas that require further research.

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InGaN/GaN multi-quantum well nanowires: Enhanced trace-level NO2 detection for environmental and breath analysis

Cited by 2 publications

References 83 publications

Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy

Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy

Recent Advances in the Growth and Compositional Modelling of III–V Nanowire Heterostructures

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