Inhibitor-free area-selective atomic layer deposition of SiO2 through chemoselective adsorption of an aminodisilane precursor on oxide versus nitride substrates

Computational Investigation of Precursor Blocking during Area-Selective Atomic Layer Deposition Using Aniline as a Small-Molecule Inhibitor

“…In some specific cases, an inherent selectivity may be observed as a result of the nature of the growth and non-growth areas. , However, typically, selectivity is achieved via the deactivation of the non-growth area using inhibitors, for example, using self-assembled monolayers (SAMs) or small-molecule inhibitors (SMIs). ,− SAMs, containing long-chain hydrocarbons, have conventionally been used as inhibitors to achieve area-selective atomic layer deposition (ALD). , However, as a result of the low vapor pressure of these large molecules, application of SAMs typically relies on wet chemistry and requires long reaction times to achieve close packing. − These properties limit the compatibility of SAMs with high-volume applications in the industry . As an alternative, the use of SMIs recently showed promising results for area-selective ALD. ,,− SMIs can be supplied into the vacuum reactor during the deposition via vapor-phase dosing .…”

“…In some specific cases, an inherent selectivity may be observed as a result of the nature of the growth and non-growth areas. 8 , 12 However, typically, selectivity is achieved via the deactivation of the non-growth area using inhibitors, for example, using self-assembled monolayers (SAMs) or small-molecule inhibitors (SMIs). 6 , 11 − 18 SAMs, containing long-chain hydrocarbons, have conventionally been used as inhibitors to achieve area-selective atomic layer deposition (ALD).…”

“…Most of the conventional fabrication processes are designed on the basis of the top-down approach, comprising numerous deposition, lithography, and etching steps. , At small feature sizes, traditional top-down approaches suffer from alignment issues between the patterning steps . Therefore, processes exploiting the properties of the underlying pattern instead of purely relying on metrology and patterning precision are needed. , During the past decade, area-selective deposition (ASD), a bottom-up alternative enabling self-aligned fabrication schemes, has gained considerable attention in academia and industry. − ASD refers to processes that deposit the target material on the areas where the growth is desired (i.e., growth areas), while deposition is avoided on the neighboring areas where the growth is not desired (non-growth areas). The selectivity of deposition on the growth areas can be achieved by exploiting differences in the chemical or physical properties, such as different material compositions, surface terminations, or lattice properties. ,,, …”

The Effect of Surface Terminations on the Initial Stages of TiO2 Deposition on Functionalized Silicon

“…If the selectivity is lost following multiple cycles of processing, the technological utility of the method is diminished. Despite the fact that there are a number of successful attempts to alleviate this selectivity loss with small molecule inhibitors [7][8][9][10][11][12][13] (SMI) or incorporation of atomic layer etching (ALE) into ALD-ALE supercycles, [14][15][16][17] they all involve additional processing steps, and thus the nucleation remains at the focus of the need for fundamental understanding. The main problem in understanding the mechanistic origins of nucleation is that there is a variety of substrates used in deposition with various distributions of different surface reactive sites.…”

Area-Selective Atomic Layer Deposition of SnS2 Nanosheets for Applications of Back-End-of-Line-Compatible Transistors

“…To date, studies on area-selective ALD have been limited to a few materials, e.g., dielectrics − and noble metals. − However, various materials are used for layer stacking in semiconductor devices. With the emergence of nanoscale devices, it is essential to increase the types of materials that can be selectively deposited.…”