Initial stages of Cu epitaxy on Ni(100): Postnucleation and a well-defined transition in critical island size

Müller, Bert; Nedelmann, Lorenz; Fischer, Björn; Brune, Harald; Kern, Klaus

doi:10.1103/physrevb.54.17858

Cited by 94 publications

(70 citation statements)

References 42 publications

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“…In this postnucleation regime, monomers diffuse toward each other after deposition leading to a mean cluster size of s ∼ 3 atoms [88,126]. The same result is obtained when depositing at temperatures where diffusion is frozen and subsequently gently annealing the surface to activate diffusion.…”

Section: The Ostwald Ripeningsupporting

confidence: 63%

“…As soon as terrace diffusion gets thermally activated, diffusion along the cluster edge is activated, too. This generally leads to compact square islands at any deposition temperature [124,126,[210][211][212][213][214]]. An exception is the formation of noncompact islands observed for Cu/Ni(100), which has been attributed to strain-induced increase in the step length [215].…”

Section: Fractalsmentioning

confidence: 99%

“…This postdeposition mobility gives rise to cluster growth and cluster nucleation in the time between deposition and imaging with STM. It is clearly visible in Figure 20.8d that this leads to a reduced slope ending with a plateau where all islands are created after deposition, and thus n x becomes independent of the deposition temperature [121,126]. Postdeposition mobility can be accounted for in rate equations using mean-field nucleation theory.…”

Section: Homogeneous Nucleationmentioning

confidence: 99%

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Epitaxial Growth of Thin Films

Brune

2014

Surface and Interface Science

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This chapter gives an introduction to the epitaxial growth of thin films on solid substrates. The term epitaxy refers to the growth of a crystalline layer on (epi) the surface of a crystalline substrate, where the crystallographic orientation of the substrate surface imposes a crystalline order (taxis) onto the thin film. This implies that film elements can be grown, up to a certain thickness, in crystal structures differing from their bulk. If film and substrate have the same crystal lattices, but different lattice constants, the film will be under strain, that is, it will have a slightly different lattice constant than in its own bulk. Both effects, together with the electronic hybridization at the interface, lead to novel properties.One distinguishes homo-and heteroexpitaxy, where the former refers to the growth on one element on a crystal surface of its own and the latter refers to the more general case, where film and substrate materials are different. Note that the first distinguishes itself from crystal growth, as we will see in more detail later.We start this chapter by giving examples from technology, illustrating where thin epitaxial films are used and outlining potential applications that become reality once we are able to grow the respective thin film sequences. We then contrast thin film and crystal growth, respectively, with kinetics and thermodynamics of growth. We introduce the deposition techniques used in epitaxial thin film growth and then discuss the classical thermodynamic approach, which led to the definition of the growth modes. These modes refer to the morphology taken on by a system grown close to thermodynamic equilibrium. Often films are grown far away from equilibrium and their morphology is determined by kinetics, that is, it is the result of the microscopic path taken by the system during growth. This path is determined by the hierarchy of rates of the single atom, cluster or molecular precursor displacements as compared to the deposition rate. Owing to the importance of kinetics, we focus in the rest of the chapter on the kinetic description of growth. In order to simplify the topic, we start with coverages below one atomic layer that is referred to as a monolayer. The first submonolayer part will be on nucleation, followed by a discussion of island shapes that, very much like snowflakes, tell us about the elementary processes that took place during their formation. We then discuss island coarsening, either by evaporation of atoms from their edges, referred to as the Ostwald ripening, or by the diffusion and subsequent coalescence of entire islands, referred to as the

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Section: The Ostwald Ripeningsupporting

confidence: 63%

Section: Fractalsmentioning

confidence: 99%

Section: Homogeneous Nucleationmentioning

confidence: 99%

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Epitaxial Growth of Thin Films

Brune

2014

Surface and Interface Science

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“…A parallel for this phenomenon is that which is observed in the molecular beam heteroepitaxy of Cu on a Ni(100) wafer. 18 The lattice mismatch and associated strain relief results in the growth of 15 small islands of copper of a critical atom density which ripen into larger islands on continued deposition. Similar strain dependent island formation on CdS nanorods was recently reported by Robinson et Photoluminescence (PL) data of the as synthesised CdS nanorods and the CdS nanorods after 2 and 30 minutes reaction with AuCl respectively is shown in figure 6.…”

Section: Resultsmentioning

confidence: 99%

Gold tip formation on perpendicularly aligned semiconductor nanorod assemblies

2008

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A facile spin cast process is used for the instantaneous asymmetric formation of gold tips on perpendicularly aligned CdS nanorod superlattices. Tip size varies as a function of precursor solution concentration and growth time. A single uniform tip occurs on the end facets of each nanorod in the array when an optimised gold chloride solution is used , with multiple tipping 10 occuring with variations in precursor concentration. HRTEM shows that the gold tip growth does not always occur centro-symmetrically on the nanorods, with growth occuring on the (101) or the (001) facet of the wurtzite nanocrystal depending on the rod shape. X -ray diffraction confirms that the gold tips are crystalline with a 60% lattice mismatch with the wurtzite CdS nanocrystal suggesting strain relief may be a factor in tip formation. The gold tipped nanorods are further 15 characterised by photoluminescence spectroscopy.

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“…15 There are also several other cases where fractal structures in the extended growth regime with wider branches have grown, such as Cu on Ni(100). 21,22 Depending on the growth temperature fractal structures with wider branches are observed. An example of fractal growth with wide branches on a square lattice is shown in Fig.…”

Section: -7mentioning

confidence: 99%

An extended fractal growth regime in the diffusion limited aggregation including edge diffusion

et al. 2016

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We have investigated on-lattice diffusion limited aggregation (DLA) involving edge diffusion and compared the results with the standard DLA model. For both cases, we observe the existence of a crossover from the fractal to the compact regime as a function of sticking coefficient. However, our modified DLA model including edge diffusion shows an extended fractal growth regime like an earlier theoretical result using realistic growth models and physical parameters [Zhang et al., Phys. Rev. Lett. 73 (1994) 1829]. While the results of Zhang et al. showed the existence of the extended fractal growth regime only on triangular but not on square lattices, we find its existence on the square lattice. There is experimental evidence of this growth regime on a square lattice. The standard DLA model cannot characterize fractal morphology as the fractal dimension (Hausdorff dimension, DH) is insensitive to morphology. It also predicts DH = DP (the perimeter dimension). For the usual fractal structures, observed in growth experiments on surfaces, the perimeter dimension can differ significantly (DH ≠ DP) depending on the morphology. Our modified DLA model shows minor sensitivity to this difference.

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Initial stages of Cu epitaxy on Ni(100): Postnucleation and a well-defined transition in critical island size

Cited by 94 publications

References 42 publications

Epitaxial Growth of Thin Films

Epitaxial Growth of Thin Films

Gold tip formation on perpendicularly aligned semiconductor nanorod assemblies

An extended fractal growth regime in the diffusion limited aggregation including edge diffusion

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