InP based converter cells under DC plasma influence

Abstract

The plasma parameters have been determined in an infrared image converter for the InP based plasma cell in a broad range of gas pressure from 10 Torr to 760 Torr at room temperature. The electrical properties of the system are controlled by both the plasma and InP electrode. InP has high electron mobility compared to other semiconductors and it can be used for high-speed optoelectronic device applications. Further, any small change in the charge transport mechanism may cause important changes in the system characteristics. The experimental measurements are carried out in air and He media. The homogeneity of the discharge radiation emission depends on the resistivity distribution of the photodetector plate and the radiation intensity is proportional to the plasma current. Local changes in the resistivity of the semiconductor result in local changes in the current and plasma emission.