InP-GaInP quantum-dot lasers emitting between 690-750 nm

Optical and structural properties of InP quantum dots embedded in(AlxGa1−x)0.51Schulz1, Roßbach2, Reischle3 et al. 2009Phys. Rev. B706590View full textAdd to dashboardCite

“…Emission from type-B QDs at approximately 1.63 eV was also reported for the InP/͑Al,Ga͒InP material system by other groups. 21,22 The spectral bimodality is even more pronounced for the structure with 50% Al in the barrier. Figure 6 shows the corresponding temperature-dependent spectra of the 4.2 ML InP QDs in ͑Al 0.5 Ga 0.5 ͒ 0.51 In 0.49 P, excited with power density of 700 W cm −2 at which state filling was not yet observable.…”

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

“…While this review focused on the InAs/GaAs QD lasers emitting between 1-1.3 µm, the ongoing development of materials in other spectral regions bodes well to the future expansion to other wavelength ranges, most notably in the red [9,97,98] and near−infrared [99] spectral regions, as well as deeper into the infrared (1.7 µm), with a fully integrated tunable QD laser demonstrated recently (1685 nm-1745 nm) [100]. We therefore anticipate that the future will bring many fertile developments in this exciting area of research.…”

InP/GaInP quantum dot semiconductor disk laser for TEM<inf>00</inf> emission at 740 nm

“…photodynamic therapy. InP quantum dots (QDs) have recently been successfully applied in electrically-injected edge emitting lasers by Smowton et al who demonstrated a room temperature emission wavelength of ~740 nm and a threshold current density of 190 A cm -2 [4]. In this work InP QDs were incorporated into the active region of an SDL for laser emission at ~740 nm in a circularly-symmetric single transverse mode output beam.…”