2009 IEEE LEOS Annual Meeting Conference Proceedings 2009
DOI: 10.1109/leos.2009.5343357
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InP/GaInP quantum dot semiconductor disk laser for TEM<inf>00</inf> emission at 740 nm

Peter J. Schlosser
1
,
Jennifer E. Hastie
2
,
S. Calvez
3
et al.

Abstract: InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.

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