InP-on-Silicon Electronically Tunable Lasers

Abstract

In this paper we present our recent results on heterogeneously integrated InP-on-silicon tunable lasers. DBR-, DFB-and AWG-based laser structures on SOI are discussed. Emphasis is laid on electronically tunable laser types, which can allow for (sub-) nanosecond fast wavelength tuning. The discussed laser devices are expected to find application in future advanced optical networks for intra-and inter-data center communication.