InP/ZnSe/ZnS: A Novel Multishell System for InP Quantum Dots for Improved Luminescence Efficiency and Its application in a Light-Emitting Device

Ippen, Christian; Greco, Tonino; Wedel, Armin

doi:10.1080/15980316.2012.683537

Cited by 43 publications

(41 citation statements)

References 12 publications

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“…The InP/ZnSe/ZnS muitishell QDs were synthesized by heating-up method simple and reproducible compared to conventional hot-injection method [2]. The inverted devices were fabricated with the fallowing structure; ITO/Al:ZnO/QDs/TCTA/MoO 3 /Ag.…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, a prominent future task is the substitution of Cd‐containing QDs with less toxic materials. InP‐based QDs are a promising material combination among the III–V semiconductor nanocrystals because of large quantum confinement effects with high exciton diameter, reduced toxicity and wide emission spectrum tunability which includes the entire range of visible light . Here, we investigated the performance of inverted QD‐LEDs fabricated with synthesized InP/ZnSe/ZnS QDs and commercially available aluminum doped ZnO (Al:ZnO) NP.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, a prominent future task is the substitution of Cd-containing QDs with less toxic materials. InP-based QDs is a promising material among the III-V semiconductor nanocrystals [2]. Since organic-inorganic hybrid structure has better device performance, zinc oxide (ZnO) nanoparticle (NP) charge transport layer has a lot of attention due to the advantage of device stability and easy preparation process [1].…”

Section: Introductionmentioning

confidence: 99%

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Efficiency enhancement of InP‐based inverted QD‐LEDs by incorporation of a polyethylenimine modified Al:ZnO layer

et al. 2015

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We report efficiency enhancement of indium phosphide (InP) quantum dot-based light-emitting diodes (QD-LEDs) by using an polyethylenimine (PEI) surface modifier. By adapting a solution processed PEI layer on top of a aluminum doped zinc oxide (Al:ZnO) nanoparticle (NP) film, the leakage current of the inverted device was substantially suppressed. In addition, the electron injection into the conduction band edge (CBE) of InP/ZnSe/ZnS QDs was also facilitated by the low work function (WF) of the Al:ZnO film which was realized by the strong interfacial dipoles of the thin film of PEI. As a result, the charge balance in the inverted devices was controlled by the change of surface roughness, the WF and the thickness of neighboring layers via spin-coating the PEI dissolved in alcohol mixture on the Al:ZnO layer such that the current efficiency was dramatically increased from 0.07 cd/A to 3.17 cd/A. The performance of our device is not comparable to Cd-based devices; however, it shows the great potential for using an interfacial dipole layer to develop highly efficient InP-based inverted QD-LEDs

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Efficiency enhancement of InP‐based inverted QD‐LEDs by incorporation of a polyethylenimine modified Al:ZnO layer

et al. 2015

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“…[12] demonstrated QD-LEDs with maximum brightness and EQE of 218,800 cd/m À2 and 5.8%, respectively; even for the blue emitting QD-LEDs, we note that Lee et al recently recorded peak EQE as high as 7.1% [16]. But for the good monochromaticity heavy-metal-free QD based LEDs, most of the researches have focused on InP/ZnS QDs based LEDs [17][18][19]. Currently, the results of the heavy-metal-free QD-LEDs have recorded 3.46% of EQE and 3900 cd/m 2 of maximum brightness [19].…”

Section: Introductionmentioning

confidence: 93%

Cadmium-free quantum dots based violet light-emitting diodes: High-efficiency and brightness via optimization of organic hole transport layers

Lin

Shen

Wang

et al. 2015

Organic Electronics

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“…Therewith, the authors noted that the composi tion of the shell was not quite clear; because of the one pot manner of its growth, they failed to determine if it consisted of pure ZnS or rather was a mixture of compounds. Some works were devoted to the growth of shells formed from semiconductors of other com positions, e.g., CdSe [39], CdS [40], ZnSe [41,42], ZnSe/ZnS [43][44][45], or ZnCdSe 2 [46]. However, the overwhelming majority of publications have dealt with the production and investigation of structures com prising ZnS shells [47][48][49][50][51][52][53][54][55].…”

Section: The Effect Of An Additional Semiconductor Shellmentioning

confidence: 99%

Synthesis and properties of colloidal indium phosphide quantum dots

Бричкин

2015

Colloid J

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Semiconductor colloidal quantum dots possessing unique spectral luminescent characteristics are of great interest for the development of novel materials and devices, which are promising to be used in var ious fields. However, the contemporary high quality quantum dots contain Cd, Pb, Hg, Se, and Te ions and are toxic, with this circumstance limiting their wide practical application. Therefore, the attention of researchers has recently been focused on A III B V semiconductor quantum dots-in particular, InP ones, which are markedly more environmentally safe. InP quantum dots have spectral characteristics similar to those of well studied CdSe quantum dots and can, in principle, replace the latter in many cases, especially, taking into account their more pronounced size effect caused by the narrow energy gap and the large Bohr radius of the exciton. Moreover, the stronger InP covalent bond than the ionic one in A II B VI semiconductors makes it possible to expect that they have a higher photostability and stability in active media. This work pre sents a review of the modern literature devoted to the synthesis and properties of colloidal indium phosphide quantum dots, which are very promising for use as substitutes of toxic cadmium based quantum dots.

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InP/ZnSe/ZnS: A Novel Multishell System for InP Quantum Dots for Improved Luminescence Efficiency and Its application in a Light-Emitting Device

Cited by 43 publications

References 12 publications

Efficiency enhancement of InP‐based inverted QD‐LEDs by incorporation of a polyethylenimine modified Al:ZnO layer

Efficiency enhancement of InP‐based inverted QD‐LEDs by incorporation of a polyethylenimine modified Al:ZnO layer

Cadmium-free quantum dots based violet light-emitting diodes: High-efficiency and brightness via optimization of organic hole transport layers

Synthesis and properties of colloidal indium phosphide quantum dots

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