Electron. Mater. Lett.
 2024
DOI: 10.1007/s13391-024-00513-z
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Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor

Dong-Hee Lee,
Young-Ha Kwon,
Nak-Jin Seong
et al.
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