Insights on Si doping on PNRs for NDR with high PVR and diode behaviour with a high rectification ratio

Carmel, Santhia; Pon, Adhithan; Ramesh, R.; Bhattacharyya, Arkaprava

doi:10.1016/j.physe.2019.113630

Cited by 6 publications

(2 citation statements)

References 24 publications

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“…In contrast, at valley currents in Figure c, it is extremely rare for electrons to pass through the Fermi level. In addition, the PVR provides a better measure of the degree of current variation, which is more important for MVL devices than the rate of current variation. A magnetic tunnel junction (MTJ) that is consisted of two ferromagnetic layers with an insulating layer between them is an important carrier for MVL computation. − The discovery of an MTJ at room temperature has greatly improved the efficiency of nanodevice processing and storage density, and the MTJ constructed by Fe/MgO/Fe is widely used in personal terminal equipment. , Therefore, the in-depth study of MTJs has a wide range of application scenarios.…”

Section: Introductionmentioning

confidence: 99%

“…In contrast, at valley currents in Figure 1c, it is extremely rare for electrons to pass through the Fermi level. In addition, the PVR provides a better measure of the degree of current variation, 11 which is more important for MVL devices than the rate of current variation. A magnetic tunnel junction (MTJ) that is consisted of two ferromagnetic layers with an insulating layer between them is an important carrier for MVL computation.…”

Section: ■ Introductionmentioning

confidence: 99%

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MXene-Based Sc₂CHO/Sc₂NHO/Sc₂CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study

Liu

Zhu

Wang

et al. 2023

ACS Appl. Nano Mater.

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The rapid development of technologies such as machine learning and artificial intelligence has further accelerated the growth of multi-value logic (MVL) computing nanodevices. However, current MVL nanodevices based on conventional materials face the challenges of low peak−valley ratio (PVR) and unstable spin filtering effects. Therefore, the intrinsic half-metal nanoscale MXene has become the answer to the development bottleneck of MVL nanodevices for its outstanding properties such as high Curie temperature and an appropriate band structure. The present work attempts to design spintronic magnetic tunnel junctions (MTJs) based on new predicted Sc 2 CHO as half-metallic electrodes and Sc 2 NHO as semiconductor-based scattering regions. Furthermore, we simulate its transport properties from density functional theory combined with nonequilibrium Green's function. And we have considered the effect of the length of the scattering region on MTJ performance. According to our calculations, the spintronic transport of the MTJs demonstrates up to perfect 100% polarizability spin currents stably due to the single-channel conduction capability of half-metal Sc 2 CHO. The MTJs exhibit a significant negative differential resistance (NDR) phenomenon, with the PVR of the type 2N reaching 1.28 × 10 6 , the highest value among the two-dimensional spintronic nanodevices currently being theoretically explored. MTJs with a high PVR will be beneficial for the application and development of MVL nanodevices. The spin filtering effect and NDR phenomenon can be well-maintained as the scattering region length increases, and the PVR usually almost always remains 10 4 . This is well reflected in the transmission spectra and molecular projection self-consistent Hamiltonian. The tunneling magnetoresistance phenomenon is also observed.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

MXene-Based Sc₂CHO/Sc₂NHO/Sc₂CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study

Liu

Zhu

Wang

et al. 2023

ACS Appl. Nano Mater.

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Recent Developments in Black Phosphorous Transistors: A Review

Pon

Bhattacharyya

Rathinam

2021

J. Electron. Mater.

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Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene, and transition metal dichalcogenides have attracted intense research attention because of their rich physics and potential for integration into next-generation electronic devices. These materials offer superior electrostatic control to their bulk counterparts, which makes them fascinating for device fabrication. After graphene and MoS 2 , the most intensively explored 2D material is black phosphorus (BP). During the past half-decade, BP has notably achieved excellent performance when included in transistors. This review paper aims to throw some light on BP properties and their performance in a field effect transistor device. The state-of-the-art BP transistors are reviewed, and a balanced view of both the benefits and drawbacks is provided. Keywords 2D material • black phosphorous • phosphorene • TCAD • DFT • MOSFET • TFET* Ramesh Rathinam

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The Negative Differential Resistance Behaviors of Zigzag GeSe Nanoribbons with Unilateral Edge Passivation via Hydrogen, Fluorine and Chlorine

Guo

Hao²,

Wang³

2022

J. Electron. Mater.

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Insights on Si doping on PNRs for NDR with high PVR and diode behaviour with a high rectification ratio

Cited by 6 publications

References 24 publications

MXene-Based Sc₂CHO/Sc₂NHO/Sc₂CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study

MXene-Based Sc₂CHO/Sc₂NHO/Sc₂CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study

Recent Developments in Black Phosphorous Transistors: A Review

The Negative Differential Resistance Behaviors of Zigzag GeSe Nanoribbons with Unilateral Edge Passivation via Hydrogen, Fluorine and Chlorine

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Insights on Si doping on PNRs for NDR with high PVR and diode behaviour with a high rectification ratio

Cited by 6 publications

References 24 publications

MXene-Based Sc2CHO/Sc2NHO/Sc2CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study

MXene-Based Sc2CHO/Sc2NHO/Sc2CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study

Recent Developments in Black Phosphorous Transistors: A Review

The Negative Differential Resistance Behaviors of Zigzag GeSe Nanoribbons with Unilateral Edge Passivation via Hydrogen, Fluorine and Chlorine

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Product

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MXene-Based Sc₂CHO/Sc₂NHO/Sc₂CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study

MXene-Based Sc₂CHO/Sc₂NHO/Sc₂CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study