Integrated Electro-Optic Modulator in Z-Cut Lithium Niobate Thin Film With Vertical Structure

Chen, Guan-Yu; Lin, Hong-Lin; Ng, Jun Da; Danner, Aaron J.

doi:10.1109/lpt.2021.3114993

Cited by 11 publications

(10 citation statements)

References 17 publications

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“…[262] By integrating lithium niobate-based devices on the same chip, using similar heterogeneous integration methods to those discussed in Section 3.3, the situation may be alleviated in the future. [66,[263][264][265][266][267][268] Looking forward, the hybrid integration of different materials on a single chip will be the trend as this can maximize advantages of different material systems simultaneously.…”

Section: Discussionmentioning

confidence: 99%

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Chen

Shi

et al. 2022

Laser & Photonics Reviews

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A photodetector (PD) converts optical signals into electrical ones and is widely used in optical interconnect. High-speed PDs are in high demand as they are necessary to meet requirements of large-capacity optical interconnect. Many high-performance PDs with various absorption materials and structures are demonstrated on silicon photonics platform, including germanium (Ge) PDs, germanium tin (GeSn) PDs, heterogeneous integrated III-V PDs, all silicon (Si) PDs, 2D material PDs, etc. These kinds of PDs continue to set new records of speed and open an era of ultrahigh-speed optical interconnect. A comprehensive summary of the state-of-the-art high-speed PDs on silicon photonics platform is necessary and meaningful. In this review, the basic metrics and key process technologies for the PDs are introduced, and various types of high-speed PDs based on silicon photonics platform are reviewed and discussed. Furthermore, the summary and perspectives are provided. It is hoped that this review can provide readers more insights into recent advances in high-speed PDs on silicon photonics platform and contribute to the further development.

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Section: Discussionmentioning

confidence: 99%

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Chen

Shi

et al. 2022

Laser & Photonics Reviews

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“…There are several advantages of Z-cut LN based devices compared with X/Y-cut LN. [8,13,14] First, the Z-cut TFLN offers the flexibility to modulate light perpendicular to the direction of light propagation, which can be advantageous in certain applications where modulation in the plane is not feasible or desired, [8,14,21,132,133] usually to take advantage of the fact that LN is isotropic about the Z axis but not about the X/Y axis. Second, the electrical field in Z-cut TFLN is in the vertical direction and thus will have a large overlap with the optical field along a waveguide cross section.…”

Section: Z-cut Tfln-based Modulatormentioning

confidence: 99%

“…TFLN modulator technology has seen significant advancements. Numerous TFLN modulators based on various structures have been demonstrated, such as the Mach-Zehnder interferometer (MZI), [5,6,8] Michelson interferometer (MI), [9,10] resonator cavity, [11,12] and Z-cut structure. [13,14] Moreover, the speed record is consistently being broken.…”

Section: Introductionmentioning

confidence: 99%

“…[4,20,21] The anisotropic property of TFLN makes it troublesome to have waveguide bends as easily as in other materials, which also contributes to typical large device sizes. [8] For example, the most widely used MZI type modulator ordinarily requires centimeter-scale waveguide lengths for the EO effect to reach sufficient accumulation to realize high modulation efficiency with low bias voltage. [5,6] Even though resonator structures can help to reduce the device size, the improvement is not as obvious as in other material platforms as it still needs a certain path length for sufficient phase accumulation.…”

Section: Introductionmentioning

confidence: 99%

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Compact and Efficient Thin‐Film Lithium Niobate Modulators

Chen,

Gao,

Lin

et al. 2023

Advanced Photonics Research

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Thin‐film lithium niobate (TFLN) modulators have garnered significant attention in the field of integrated photonics due to their ability to manipulate light. Numerous TFLN modulators have been demonstrated over the past few years, with speed records consistently being broken. However, due to the low refractive index contrast and anisotropic properties of TFLN, modulators based on this material feature larger device sizes and lower efficiency. A more compact and efficient modulator is important, as it is required for future dense integration and low power consumption applications. There have been some reports on how to reduce device size, and research is ongoing. A comprehensive summary can help individuals understand the current state of research and existing problems. In this review, we provide an overview of recent advancements in TFLN modulator technology, focusing on compactness and efficiency. Herein, various types of modulators, such as the Mach–Zehnder interferometer, Michelson interferometer, resonator cavity, and Z‐cut type modulators, are discussed. Moreover, potential improvement strategies and applications for compact and efficient TFLN modulators in advanced photonic systems are explored. In conclusion, in this review, the recent achievements in compact and efficient TFLN modulators are summarized and their significance in various optoelectronic applications is emphasized.

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“…Subsequently, with the high-quality TFLN that is now commercially available, various kinds of modulators have been demonstrated. 31,52,88,[241][242][243][272][273][274][275][276][277][278][279][280][281][282][283][284][285][286][287][288] Some of the reported modulators in LN platforms are summarized in Table 5.…”

Section: Eo Devices 421 Electro-optic Modulatormentioning

confidence: 99%