Integrated Tunable CMOS Laser for Si Photonics

Marchena, Elton; Creazzo, Tim; Krasulick, Stephen; Yu, Peter T.; Orden, Derek Van; Spann, John; Blivin, Christopher C.; Dallesasse, John M.; Varangis, P.M.; Stone, R.; Mizrahi, Amit

doi:10.1364/nfoec.2013.pdp5c.7

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Cited by 17 publications

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“…The integrated III-V material can be used to implement efficient modulators [7] and detectors [8] and to provide on-chip gain for lasers and semiconductor optical amplifiers (OAs). Having the laser source integrated on-chip is a main advantage of this architecture and there have been various demonstrations of heterogeneous lasers having performances comparable with InP-based devices [9], [10].…”

Section: Introductionmentioning

confidence: 99%

30-Gb/s Optical Link Combining Heterogeneously Integrated III–V/Si Photonics With 32-nm CMOS Circuits

Dupuis

Lee

Proesel

et al. 2015

J. Lightwave Technol.

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We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.

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