Integrated two-color detection for advanced focal plane array (FPA) applications

Wilson, J. A.; Patten, E. A.; Chapman, G. R.; Kosai, K.; Baumgratz, B. A.; Goetz, P. M.; Tighe, S. J.; Risser, R. F.; Herald, R. F.; Radford, W. A.; Tung, Tse; Terre, William A.

doi:10.1117/12.189237

Cited by 35 publications

(13 citation statements)

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“…Using optimized growth condition for Si(211)B substrates and a CdTe/ZnTe buffer system, epitaxial layers with etch pit density (EPD) in the 10 6 cm −2 range have been obtained. This value of EPD has little effect on both MWIR and LWIR HgCdTe/Si detectors [18,14]. By comparison, HgCdTe epitaxial layers grown by MBE or LPE on bulk CdZnTe have typical EPD values in the 10 4 to mid-10 5 cm −2 range where there is a negligible effect of dislocation density on detector performance.…”

Section: Hgcdtementioning

confidence: 97%

“…The 7 × 7 cm Cross-section views of unit cells for various back-illuminated dual-band HgCdTe detector approaches: (a) bias--selectable n-p-n structure reported by Raytheon [17], (b) simultaneous n-p-n design reported by Raytheon [18], (c) simultaneous p-n-n-p reported by BAE Systems [19], (d) simultaneous n-p-p-p-n design reported by Leti [20], (e) simultaneous structure based on p-on-n junctions reported by Rockwell [21], and (f) simultaneous structure based on n-on-p junctions reported by Leti [22].…”

Section: Hgcdtementioning

confidence: 99%

“…Dual band detectors are grown by MBE on lattice matched CdZnTe wafers (see Fig. 7) [18,14,[19][20][21][22]. Recently, Raytheon Vision Systems (RVS) has developed two-colour, large-format infrared FPAs to support the US Army's third generation FLIR systems.…”

Section: Hgcdtementioning

confidence: 99%

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Infrared Detectors for the Future

Rogalski

2009

Acta Phys. Pol. A

127

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In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, VO x microbolometer arrays are clearly the most used technology. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in microelectromechanical systems have led to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

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Section: Hgcdtementioning

confidence: 97%

Section: Hgcdtementioning

confidence: 99%

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Infrared Detectors for the Future

Rogalski

2009

Acta Phys. Pol. A

127

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“…An integrated two-color detector eliminates the need for a second focal plane array and thus offers advantages such as automatic pixel registration, lower cost and cooling requirements, and system complexity as compared to two independent detectors used for the same application. 1 Hgl_xCdxTe is the material of choice for the detection of mid-wave (MWIR), long wave (LWIR), and very-long wave IR (VLWIR) radiation. This is a result of its band gap tunability, desirable optical and elec-(Received December 19, 1996; accepted February 28, 1997) trical properties, and the ability to optimize performance at the required temperature for the infrared band of interestY Significant progress has been made toward the growth ofunispectral HgCdTe detectors such as p-onn LWIR detectors by employing molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band

Rajavel

Jamba

Jensen

et al. 1997

Journal of Elec Materi

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The first report of molecular beam epitaxial growth and performance of HgCdTe two-color detectors for the simultaneous detection of radiation at 4.1 and 4.5 pm is presented. In-situ doped devices with the n-p-n architecture were grown by molecular beam epitaxy on (211)B CdZnTe substrates. Representative structures exhibited x-ray rocking curves with full width at half-maxima of 40-60 arcs. The typical near surface etch pit density in these structures were 4-7 • 106 cm -2. The devices were processed as mesa diodes and electrical contacts were made to the two n-type layers and the p-type layer to facilitate simultaneous operation of the two p-n junctions. The spectral response characteristics of the devices were characterized by sharp turn-on and turn-off for both bands, with R0A values >5 • l0 s ~cm 2 at 77K. The detectors exhibited quantum efficiencies >70% in both bands.

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“…A variation on the original back to back concept was implemented using HgCdTe at Rockwell [112] and Santa Barbara Research Center [113]. Following the successful demonstration of multispectral detectors in LPE-grown HgCdTe devices [113], the MBE and MOCVD techniques have been used for the grown of a variety of multispectral detectors at Raytheon [27,[114][115][116][117], BAE Systems [118], Leti [28,30,[119][120][121], Selex and QinetiQ [29,122,123], DRS, [26,124,125] Teledyne and NVESD [126,127]. For more than a decade a steady progression have been made in a wide variety of pixel size (to as small as 20 µm.…”

Section: Multicolour Detectorsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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Integrated two-color detection for advanced focal plane array (FPA) applications

Cited by 35 publications

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Infrared Detectors for the Future

Infrared Detectors for the Future

Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band

New material systems for third generation infrared photodetectors

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