Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

Electron Raman scattering in semiconductor step-quantum well

“…However, we have used a much simpler model and obtained analytical solutions, being our results consistent with the obtained results in Ref. [24].…”

“…[24], Karimi studied the differential cross-section for the intersubband electron Raman scattering process for a similar system. The model used in Ref.…”

“…The model used in Ref. [24], is more complicated than used by ours, Karimi take into account polarization fields induced by the crystal structure of the material. Therefore, the author obtained numerically the eigenvalues of energy and wave functions.…”

“…For example, the effects of the intense laser field, indium composition and the well width on the Electron Raman Scattering of the strained InGaN/GaN quantum wells, considering which the spontaneous polarization fields caused by the crystal structure can produce a strong internal built-in electric field [24], the coupled quantum wells and the interaction between the interface related Rashba and Dresselhaus spin-orbit interaction [25], the influences of polarization and structure parameters on the intersubband transition frequency within terahertz range and oscillator strength in GaN/AlGaN step quantum well and other factors including doping location and concentration [15], the properties of AlGaN-based multi-quantumwells designed for intersubband optoelectronics in the THz spectral range. The authors studied the reproducibility issues associated to the current step-QW architecture [26], the intersubband transitions in III-nitride semiconductor [16,17].…”

Effects of external fields, the hydrostatic pressure and temperature on the electronic Raman scattering of a hydrogenic impurity in a two-dimensional parabolic quantum dot

“…There exist many experimental studies which concerning the Raman scattering in nanostructures [56,57,58,59,60,61,62]. A great number of theoretical works has also been devoted to interpret the experimental results through the calculation of the differential cross-section (DCS) for the electron-Raman scattering (ERS) [63,64,65,66,67,68,69,70,71,72,73,74,75,76,77,78,79,80,81,82]. Ismailov and Mehdiyev [76] have investigated the effects of the dot size and the external magnetic field on the ERS in a cylindrical QD.…”