Interactions and superconductivity in heavily doped MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>

Roldán, Rafael; Cappelluti, E.; Guinea, F.

doi:10.1103/physrevb.88.054515

Cited by 101 publications

(110 citation statements)

References 38 publications

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“…Separated layers may include, in particular, enough electron-electron repulsion to establish sign changing superconductivity. 47 In summary, we have found highly anomalous tunneling conductance features on the surface of 2H -TaSe 2 . We observe a significant increase of the critical temperature close to the surface, and a zero-bias peak in single-layer crystals of 2H -TaSe 2 when they lie on top of a surface of 1T -TaSe 2 .…”

Section: Discussionmentioning

confidence: 66%

Scanning tunneling measurements of layers of superconducting 2H-TaSe2: Evidence for a zero-bias anomaly in single layers

et al. 2013

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We report a characterization of surfaces of the dichalcogenide TaSe 2 using scanning tunneling microscopy and spectroscopy at 150 mK. When the top layer has the 2H structure and the layer immediately below the 1T structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero-bias peak on top of Se atoms to a gap in between Se atoms. The zero-bias peak is additionally modulated by the commensurate 3a 0 × 3a 0 charge-density wave of 2H -TaSe 2 . Multilayers of 2H -TaSe 2 show a spatially homogeneous superconducting gap with a critical temperature also of 1 K. We discuss possible origins for the peculiar tunneling conductance in single layers.

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Section: Discussionmentioning

confidence: 66%

Scanning tunneling measurements of layers of superconducting 2H-TaSe2: Evidence for a zero-bias anomaly in single layers

et al. 2013

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“…To study the effect of electron-electron interactions, we use a model which includes both long range and short range interactions as introduced by Roldan et al [21]. We consider the interaction of quasiparticles by using the leading diagram approximation, which is the exchange interaction.…”

Section: Theory and Methodsmentioning

confidence: 99%

Charge compressibility and quantum magnetic phase transition inMoS2

Rostami

Asgari

2015

Phys. Rev. B

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We investigate the ground-state properties of monolayer MoS2 incorporating the Coulomb interaction together with a short-range intervalley interaction between charged particles between two valleys within the Hartree-Fock approximation. We consider four variables as independent parameters, namely homogeneous charge (electron or hole) density, averaged dielectric constant, spin degree of freedom and finally the Hubbard repulsion coefficient which originates mostly from 4d orbits of Mo atoms. We find the electronic charge compressibility within the mean-field approximation and show that non-monotonic behavior of the compressibility as a function of carrier density which is rather different from those of the two-dimensional electron gas. We also explore a paramagnetic-toferromagnetic quantum phase transition for the wide range of the electron density in the parameter space.

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“…10(a). MX 2 is composed of an inner layer of metal M atoms ordered in a triangular lattice sandwiched between two layers of chalcogen X atoms lying on the triangular net of alternating hollow sites [100][101][102][105][106][107]. In Table III we give the values of the M X 2 lattice parameters.…”

Section: Transition Metal Dichalcogenidesmentioning

confidence: 99%

Strain engineering in semiconducting two-dimensional crystals

Roldán

Castellanos-Gómez

Cappelluti

et al. 2015

J. Phys.: Condens. Matter

466

428

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One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS2, WS2, MoSe2 and WSe2). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc., is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed. Contents

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Interactions and superconductivity in heavily doped MoS2

Cited by 101 publications

References 38 publications

Scanning tunneling measurements of layers of superconducting 2H-TaSe2: Evidence for a zero-bias anomaly in single layers

Scanning tunneling measurements of layers of superconducting 2H-TaSe2: Evidence for a zero-bias anomaly in single layers

Charge compressibility and quantum magnetic phase transition inMoS2

Strain engineering in semiconducting two-dimensional crystals

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