Interband photorefractive effect in semiconductors with hot-electron transport at arbitrary modulation depth

The kind of defects and their concentration have a significant impact on photorefractive phenomena taking place within the structure of semi-insulating GaAs / AlGaAs multiple quantum wells. In this paper, the impact of donor-to-acceptor concentration ratio on the grating in photorefractive two-waves mixing was examined. The formation of the space charge field for different defect concentrations as well as different external electric field intensities are analyzed.

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Interband photorefractive effect in semiconductors with hot-electron transport at arbitrary modulation depth

Cited by 4 publications

References 15 publications

Wave mixing analysis in photorefractive quantum wells in the Franz–Keldysh geometry under a moving grating

Wave mixing analysis in photorefractive quantum wells in the Franz–Keldysh geometry under a moving grating

Standard model of a photorefractive effect and moving grating wave-mixing in semi-insulating GaAs quantum wells

Impact of donor compensation ratio on photorefractive two–wave mixing dynamics in multiple quantum wells structures

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