Interface analysis of Ag/n‐type Si contacts in n‐type PERT solar cells

Abstract

To increase efficiencies of bifacial solar cells, emitter, back surface field (BSF), and metal patterns must be optimized. We study the influence of paste volume, through multiple prints, of two silver pastes on the contact formation at the rear side of n‐type passivated emitter and rear totally diffused (n‐PERT) solar cells with two BSF doping profiles. Differences in fingers' electrical properties were found between pastes. Contact resistivity shows a relative difference of 27.6%, partially explained by changes in the silver crystallites formation at the Ag/Si interface and in the crystallites' penetration depth. Variations in crystallites formation and penetration between pastes can reach 38.4% and 48.8%, respectively. Line resistance shows a difference between pastes, appearing as the main cause of an absolute efficiency difference of 2.9%. Fingers' structural and electrical properties are modified by increasing the paste volume. Microstructure analysis reveals that additional metallic printing does not only increase line cross sectional area but also increases the formation of silver crystallites, which can reach a relative increment of 23.9% between first and second prints. Further printing does not necessarily decrease contact resistivity, but reduces line resistance in up to 94.9%, which results in an absolute efficiency increase of 2.2%. In addition, the higher presence of silver oxide in the finger is related to a higher efficiency in the formation of silver crystallites. Finally, BSF doping has an influence in the open circuit voltage, short circuit current density, and contact resistivity, with differences that can reach 8.7 mV, 0.2 mA/cm2, and 6.1 mΩcm2, respectively, depending on paste and number of prints.

Optimization of N-PERT Solar Cell under Atacama Desert Solar Spectrum

“…To experimentally investigate the effect of metallization and doping concentration, we chose the rear side of n-PERT solar cells because the flat surface facilitates characterization (see Ag finger in Figure 7 a). During metallization, silver pastes etch the SiNx layer, and Ag crystallites penetrate the BSF [ 27 ]. Both processes influence the cell performance.…”

“…For validation, we used the experimental characterization of n-PERT solar cells, published in Ferrada et al [ 27 ]. Table 1 shows the geometrical, doping and Shockley-Read-Hall (SRH) parameters of the cell, while the output current–voltage characteristics are shown in Table 2 (in the Results section).…”

“…This structure was removed for the interface analysis. ( b ) Image of the SiNx etched area due to metallization; the light gray areas correspond to the etched areas (for further details, see [ 27 ]). ( c ) AFM image and depth profile of Ag imprints left behind after the chemical treatment.…”

Attenuation of short‐circuit effect along screen‐printed silver gridlines during the contact firing process of crystalline silicon solar cells

“…29,30 However, there are several reports that Al-free Ag pastes can also result in reasonably good contacts with B-doped Si emitters. [31][32][33] It has long been known that the glass frit chemistry, [34][35][36][37][38][39] as well as the shape and size of Ag powder, 17,40 exert a strong influence on the contact properties of the fire-through Ag metallization of c-Si solar cells. However, the mechanisms underlying their effects on contact formation are still largely unknown, thus motivating further studies to clarify the exact nature of contact firing reactions.…”