Interface regulation and photoelectric performance of CdZnTe/AlN composite structure for UV photodetector

Shen, Yue; Xu, Yuhao; Sun, Jiahao; Zhang, Zongkun; Huang, Jian; Cao, Meng; Gu, Feng; Wang, Linjun

doi:10.1016/j.surfcoat.2018.12.005

Cited by 13 publications

(7 citation statements)

References 11 publications

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“…Al-AlN targets were self-prepared by hot pressing sintering process above 1400 • C and 8.8 Mpa for 2 h under N 2 protective atmosphere, and the addition of element aluminum with varying concentration of 0, 1.5 and 3 wt. % into AlN targets, respectively [40]. AlN films (about 1.6 µm) were deposited on Si (111) substrates via RF magnetron sputtering system based on Al-AlN targets.…”

Section: Methodsmentioning

confidence: 99%

Defect regulation of AlN films based on Al-rich AlN targets

Wen¹,

Shen²,

Sun³

et al. 2022

Semicond. Sci. Technol.

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Aluminum nitride (AlN) films with low defect concentration were fabricated on Si substrates via RF magnetron sputtering system based on Al-rich AlN (Al-AlN) targets. The effects of Al-rich content on structure, defects and photoelectric properties of AlN films were investigated by x-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), ultraviolet-visible (UV-vis) spectra, current-voltage (I-V) and capacitance-voltage (C-V) characteristics. In particular, the defects of AlN films were investigated by XPS and low-temperature PL analyses, indicating that Al-rich AlN targets can help to reduce the defects of Al vacancy and O impurity of AlN films with an optimal Al-rich content of 1.5 wt. % (A1.5). Schottky contact behavior between AlN films and Ti/Al/Ni/Au multi-layer electrodes were revealed from I-V curves of all samples based on parallel electrodes, and AlN MSM devices prepared by A1.5 films exhibited the lowest leakage current of 2.43×10-8 A at the bias of 5 V. C-V tests indicate the less defect density and lower carrier concentrations of vertical structure of A1.5 devices. This work offers a feasible approach to regulate the defects of AlN films for practical application.

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Section: Methodsmentioning

confidence: 99%

Defect regulation of AlN films based on Al-rich AlN targets

Wen¹,

Shen²,

Sun³

et al. 2022

Semicond. Sci. Technol.

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“…7. The core level peak near 572 eV has been identified as the Te 2− ions in the CZT with a perfect zincblende structure [71]. Thus, the peaks located at 572.2 eV are attributed to Te-Cd or Te-Zn bonds in CZT.…”

Section: Articlesmentioning

confidence: 98%

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

et al. 2021

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The chemical mechanical polishing (CMP) technology has been widely used for surface modification of critical materials and components with high quality and efficiency. In a typical CMP process, the mechanical properties of abrasives play a vital role in obtaining the ultra-precision and damage-free surface of wafers for improvement of their performances. In this work, a series of fine structured rod-shaped silica (RmSiO 2 )-based abrasives with controllable sizes and diverse ordered mesoporous structures were synthesized via a soft template approach, and successfully applied in the sustainable polishing slurry for improving the surface quality of cadmium zinc telluride (CZT) wafers. Compared with commercial silica gel, solid and mesoporous silica spheres, the RmSiO 2 abrasives present superior elastic deformation capacity and surface precision machinability on account of their mesoporous structures and rod shapes. Especially, ultra-precision surface roughness and relatively effective material removal speed were achieved by the CMP process using the RmSiO 2 abrasives with a length/diameter (L/d) ratio of 1. In addition, a potential CMP mechanism of the developed polishing slurry to CZT wafer was elucidated by analyzing X-ray photoelectron spectra and other characterizations. The proposed interfacial chemical and mechanical effects will provide a new strategy for improving abrasives' machinability and precision manufacture of hard-to-machine materials.

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“…50-1440). 31 It is clear from the XRD patterns that the full width at half maximum (FWHM) has been decreased after the CMP process indicating the improved structural quality. The as-grown surface exhibited a doublet peak which may be due to the influence of different Zn content on the CZT surface.…”

Section: Effect Of Surfactant On Rms Surface Roughness Of Czt Wafer-mentioning

confidence: 99%

Surface Planarization of CdZnTe Wafers: Effect of Slurry Formulation and CMP Processing Parameters on Surface Planarity

Qasim¹,

Palani²,

Das³

2022

ECS J. Solid State Sci. Technol.

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This study investigates the effect of chemical mechanical planarization (CMP) processing parameters such as platen velocity, concentration of the oxidizer and abrasive nanoparticle, slurry pH, and surfactant types on the surface roughness of cadmium zinc telluride (CdZnTe) substrate. It was found that these parameters have a significant effect on the quality of the polished surfaces. It was also found that lower platen velocity, lesser abrasive particles concentration, basic slurry pH, and addition of anionic surfactant into the CMP slurry solution improved surface planarity. Optical surface profiler and atomic force microscopy techniques were used to monitor the surface topography before and after polishing. A notable root-mean-square surface roughness, (Rq), ~0.9 nm, has been obtained on polished CdZnTe (CZT) surface over a scan area of 481×361 µm2 under the optimized conditions of 60 rpm relative velocity, slurry pH of 9, 3.75 vol. % of oxidizer (H2O2) and 1.25 wt. % of abrasive (SiO2 nanoparticle). A probable mechanism of the present CMP surface planarization of CZT substrate has been proposed. Unlike the conventional surface planarization processes, which involve two-step lapping followed by CMP for the CZT surfaces, we have developed a single step CMP process to obtain good surface planarity.

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Interface regulation and photoelectric performance of CdZnTe/AlN composite structure for UV photodetector

Cited by 13 publications

References 11 publications

Defect regulation of AlN films based on Al-rich AlN targets

Defect regulation of AlN films based on Al-rich AlN targets

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

Surface Planarization of CdZnTe Wafers: Effect of Slurry Formulation and CMP Processing Parameters on Surface Planarity

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