Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

Poindexter, Edward H.; Caplan, P. J.; Deal, B. E.; Razouk, R. R.

doi:10.1063/1.328771

Cited by 552 publications

(177 citation statements)

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“…One of the peaks has a g-factor of 2.0002 which is close to the reported value (g = 2.0005) of deep hole oxide trap E' defects [38]. The other peak has a g-factor of 2.0058 which is intermediate between the g-values reported for P b0 (g 1 = 2.0015 -parallel to (111); g 2 = 2.0080; g 3 = 2.0087 -parallel to (011)) and P b1 (g 1 = 2.0012; g 2 = 2.0076 -parallel to (111); g 3 = 2.0052 -parallel to (011)) at the orientation used in the experiment [32,38]. We have labeled this the P b0 defect since this is the most-commonly observed defect peak in EDMR.…”

Section: B Optical Selection Of Spin-pair Speciesmentioning

confidence: 99%

“…While the SDR mechanism for phosphorus donors is believed to primarily be mediated by mid-gap danglingbond P b0 defects [18,26,32,33], previous EDMR measurements have measured E' defects [30] as well as P b1 defects and a central donor pair resonance [26]. It was recently shown that EDMR in Si:P is primarily sensitive to those donors located within roughly the first 20 nm of the Si/SiO 2 surface [34].…”

Section: Spin Dependent Recombinationmentioning

confidence: 99%

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Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

et al. 2017

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Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are coupled to interfacial defect spins near the Si/SiO2 interface. To prevent ionization of the donors, the experiments are performed at cryogenic temperatures and the mobile charge carriers needed are generated via optical excitation. The influence of this optical excitation on the SDR process and the resulting EDMR signal is still not well understood. Here, we use EDMR to characterize changes to both phosphorus and defect spin readout as a function of optical excitation using: a 980 nm laser with energy just above the silicon band edge at cryogenic temperatures; a 405 nm laser to generate hot surface-carriers; and a broadband white light source. EDMR signals are observed from the phosphorus donor and two distinct defect species in all the experiments. With near-infrared excitation, we find that the EDMR signal primarily arises from donor-defect pairs, while at higher photon energies there are significant additional contributions from defect-defect pairs. The optical penetration depth into silicon is also known to be strongly wavelength dependent at cryogenic temperatures. The energy of the optical excitation is observed to strongly modulate the kinetics of the SDR process. Careful tuning of the optical photon energy could therefore be used to control both the subset of spin pairs contributing to the EDMR signal as well as the dynamics of the SDR process.

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Section: B Optical Selection Of Spin-pair Speciesmentioning

confidence: 99%

Section: Spin Dependent Recombinationmentioning

confidence: 99%

Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

et al. 2017

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“…P b centers are trivalent Si atoms at the c-Si/SiO 2 interface. They dominate interface trapping and recombination, they are paramagnetic when uncharged [15,16] and they are strongly localized, anisotropic electronic states [17]. For the c-Si (111) surface orientation, all P b centers point into a direction perpendicular to the interface.…”

Section: A Pedmr Experiments With P B -Centersmentioning

confidence: 99%

The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects

Boehme

Lips

2006

Physica B: Condensed Matter

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A short review of the pulsed electrically detected magnetic resonance (pEDMR) experiment is presented. PEDMR allows the highly sensitive observation of coherent electron spin motion of charge carriers and defects in semiconductors by means of transient current measurements. The theoretical foundations, the experimental implementation, its sensitivity and its potential with regard to the investigation of electronic transitions in semiconductors are discussed. For the example of the P b center at the crystalline silicon (111) to silicon dioxide interface it is shown experimentally how one can detect spin Rabi-oscillation, its dephasing, coherence decays and spin-coupling effects .

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“…The broader peak at B 0 = 347.1 mT is an unresolved superposition of signal contributions from P b0 centers that have different orientations with respect to the Si (100) surface, which results in resonances at g = 2.0039 and g = 2.0081 for the orientation of the sample with respect to the magnetic field orientation indicated in Fig. 1(c) [17,18]. The current transients at the three resonances exhibit identical dynamics: An initial strong photocurrent decrease caused by the higher singlet content followed by a slower increase of the current originating from the quenching of the number of triplet states which also have a finite recombination probability [20].…”

mentioning

confidence: 99%

“…In order to probe 31 P donor electron spins, spindependent excess charge carrier recombination through so-called P b0 centers is used. P b0 centers are trivalent Si atoms at the interface between crystalline silicon (c-Si) and silicon dioxide (SiO 2 ) that introduce localized, paramagnetic states in the Si band gap and dominate electron trapping and recombination at the interface [17,18]. If a neutral P b0 center is located in the vicinity of a 31 P donor, the electron bound to the 31 P and the electron in the P b0 center can form a coupled spin pair [19,20], whose wave function |Ψ can exist in an arbitrary superposition of any of its four energy eigenstates.…”

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confidence: 99%

Electrical detection of coherent 31P spin quantum states

et al. 2006

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In recent years, a variety of solid-state qubits has been realized, including quantum dots [1,2], superconducting tunnel junctions [3,4] and point defects [5,6]. Due to its potential compatibility with existing microelectronics, the proposal by Kane [7,8] based on phosphorus donors in Si has also been pursued intensively [9,10,11]. A key issue of this concept is the readout of the 31 P quantum state. While electrical measurements of magnetic resonance have been performed on single spins [12,13], the statistical nature of these experiments based on random telegraph noise measurements has impeded the readout of single spin states. In this letter, we demonstrate the measurement of the spin state of 31 P donor electrons in silicon and the observation of Rabi flops by purely electric means, accomplished by coherent manipulation of spin-dependent charge carrier recombination between the 31 P donor and paramagnetic localized states at the Si/SiO2 interface via pulsed electrically detected magnetic resonance. The electron spin information is shown to be coupled through the hyperfine interaction with the 31 P nucleus, which demonstrates the feasibility of a recombinationbased readout of nuclear spins.Since the detection of single charges has become technically straight forward, it is widely believed [7,8,10,11,12] that the realization of spin-to-charge transfer is the key prerequisite for a successful implementation of single spin phosphorus ( 31 P) readout devices, capable of determining the actual spin state (spin up | ↑ or spin down | ↓ ). Different approaches to the electrical spin readout of 31 P-donor electron spins have been proposed based on spin-dependent transitions between neighboring 31 P atoms [7,8,10,11]. Since the states involved are energetically degenerate, these spin-to-charge transfer schemes are rather difficult to realize. Alternatively, spin-dependent transitions involving dissimilar paramagnetic states might be easier to detect as proposed by Boehme and Lips [14]. Spin-dependent charge carrier transport and recombination are known at least since 1966 [15], when Schmidt and Solomon already observed spin-dependent recombination involving 31 P donors in silicon. However, it was not demonstrated until 2003 [16] that the much more sensitive electrical detection of spins via resonant changes of recombination processes is also able to reflect coherent spin motion, which is necessary for a readout of the spin quantum state as opposed to a mere detection of the presence of spins. Figure 1(a) illustrates the readout scheme based on spin-dependent recombination demonstrated in this paper. In order to probe 31 P donor electron spins, spindependent excess charge carrier recombination through so-called P b0 centers is used. P b0 centers are trivalent Si atoms at the interface between crystalline silicon (c-Si) and silicon dioxide (SiO 2 ) that introduce localized, paramagnetic states in the Si band gap and dominate electron trapping and recombination at the interface [17,18]. If a neutral P b0 center is locate...

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Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

Cited by 552 publications

References 11 publications

Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects

Electrical detection of coherent 31P spin quantum states

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