Interfacial Charge Dynamics in Metal-Oxide–Semiconductor Structures: The Effect of Deep Traps and Acceptor Levels in GaN

Development of Vertical GaN FETs for Bi-directional Battery Charging

“…It has been ascribed to carbon on nitrogen sites (𝐶 8 ) [34]. The densities of the HT3 and HT4 have been estimated as 2% and 20% of the GaNTT doping levels correspondingly [35], [36].…”