Internal Loss and Gain Factor of InGaAsP/GaAs Laser

Abstract

The internal loss α and gain factor β of InGaAsP/GaAs double-heterostructure lasers were examined by immersing laser chips into various liquids and changing the reflectivities of a Fabry-Perot mirror. Only a small scatter was found; we evaluated α and β as 20.6 cm-1 and 0.0129 cm·A-1, respectively. The value of α was compared with the loss of AlGaAs/GaAs lasers.