Internally wavelength stabilized GaAs-based diode lasers with epitaxially-stacked multiple active regions and tunnel junctions for LiDAR applications

Advances in 9xx nm edge-emitting high-power pulse laser diodes for LiDAR applications

“…Therefore, reducing the emission wavelength range of the laser source enables a significant increase of the signal-to-noise ratio. There are several ways to achieve this, like precise control of the device temperature via a thermo-electric cooler, internal grating structures [6,7], external wavelength-selective feedback [8], or even different diode laser device concepts like distributed feedback (DFB) lasers [4,9] and vertical cavity surface emitting lasers (VCSELs, [10,11]). Many of these methods cannot be used with monolithically stacked waveguides or come at the expense of higher system complexity, cost, or performance trade-offs.…”