Ti(Al)N thin films were deposited by atomic layer deposition (ALD) from titanium tetrachloride, ammonia, and trimethylaluminum. The most important role of trimethylaluminum was to act as an extra reducing agent in order to lower the required deposition temperature. The films were deposited using four different schemes, where the pulsing order and pulse time of the reactants, and the deposition temperature, were varied. The film properties were analyzed by energy dispersive X-ray spectroscopy (EDX), time-of-flight elastic recoil detection analysis (TOF-ERDA), X-ray diffraction (XRD), and resistivity measurements. Additionally, the diffusion barrier properties of selected 10 nm thick films were studied. Both carbon and aluminum were incorporated into the Ti(Al)N films. Despite that, at deposition temperatures of 400 C and lower, Ti(Al)N films exhibited better characteristics than TiN films deposited from titanium tetrachloride and ammonia.