Interwell excitons in semimagnetic semiconductor double quantum wells in an external magnetic field

Vertsimakha, A. V.; Lev, S. B.; Sugakov, V. I.

doi:10.1134/1.1744975

Cited by 3 publications

(6 citation statements)

References 8 publications

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“…Nevertheless, these levels are enough for transformation of the different magnetic field dependences of the discussed DX and IX states in the discussed samples in the doublets of the parallel curves. It should be noted that the calculations of the energies of the excitons were made by method used in [17,18] which automatically take into account the hybridization effects and the Coulomb interaction of the electron and hole in a b Fig. 5.…”

Section: Discussion Of the Experiments And Some Estimates Concerning Ementioning

confidence: 99%

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Hybridization of Direct and Indirect Exciton States in Double Quantum Wells CdMgTe/Cd0.95Mn0.05Te/CdMgTe/CdTe/CdMgTe

2020

Nanosist. Nanomater. Nanotehnol.

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лінії відповідають прямому екситону, локалізованому у квантовій ямі Cd 0,95 Mn 0,05 Te, та непрямому екситону з електроном, локалізованим у ямі CdTe, і важкою діркою, локалізованою у ямі Cd 0,95 Mn 0,05 Te. Енергії екситонних станів було розраховано у варіяційному підході. Виявлені експериментально та чисельними розрахунками відмінності у магнетнопольових залежностях екситонних ліній в околі та віддалеки від їхнього перетинання відповідають перетину енергій найнижчого просторово квантованого стану електрона провідности у ямі CdTe та магнетнопольової залежности найнижчого просторово квантованого електронного рівня у ямі Cd 0,95 Mn 0,05 Te. Экспериментально изучается фотолюминесценция от двойных квантовых ям CdMgTe/Cd 0,95 Mn 0,05 Te/CdMgTe/CdTe/CdMgTe с шириной ямы Cd 0,95 Mn 0,05 Te в 46 мл (15 нм) и с несколькими различными ширинами ям CdTe при температуре около 2 К в магнитном поле до 4,5 Т в области пересечения магнитнополевых зависимостей экситонных линий для пространственно прямых и пространственно косвенных экситонных состояний. Обсуждаемые экситонные линии соответствуют прямому экситону, локализованному в квантовой яме Cd 0,95 Mn 0,05 Te, и косвенному экситону с электроном, локализованным в яме CdTe, и тяжёлой дырке, локализованной в яме Cd 0,95 Mn 0,05 Te. Энергии экситонных состояний рассчитываются в рамках вариационного подхода. Различия между магнитнополевыми зависимостями экситонных линий в области пересечения линий и вдали от этой области обнаруживаются в экспериментах и обнаруживаются в выполненных расчётах. Область пересечения этих экситонных линий соответствует пересечению энергетических позиций самого низкого пространственно-квантованного состояния электрона проводимости в яме CdTe и магнитнополевой зависимости аналогичного электронного состояния в яме Cd 0,95 Mn 0,05. Key words: double quantum well, electron tunnelling, direct and indirect excitons, giant spin splitting of the exciton branches. Ключові слова: подвійні квантові ями, електронне тунелювання, прямі та непрямі екситони, гігантське спінове розщеплення екситонних станів. Ключевые слова: двойные квантовые ямы, электронное туннелирование, прямые и непрямые экситоны, гигантское спиновое расщепление экситонных состояний.

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Section: Discussion Of the Experiments And Some Estimates Concerning Ementioning

confidence: 99%

“…In particular, in the luminescence, only spinpolarized excitons with the lowest energy between spin-splitted states will be observed. A theoretical study IX in such systems in the variational approach was carried out in [17,18].…”

Section: Introductionmentioning

confidence: 99%

Hybridization of Direct and Indirect Exciton States in Double Quantum Wells CdMgTe/Cd0.95Mn0.05Te/CdMgTe/CdTe/CdMgTe

2020

Nanosist. Nanomater. Nanotehnol.

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“…field dependence of the PL lines Variational calculations of the exciton energies in the double well structure were performed by the method developed in Refs. [14,15]. Only the heavy hole valence band was taken into account, i.e., it was assumed that the light hole band and the spin-orbital split valence band were well separated from the heavy hole band.…”

Section: Methods Of Calculations and Expected Magneticmentioning

confidence: 99%

“…Similar estimations can be performed for the offdiagonal matrix elements calculated on the exciton wave function C ie;jh describing an exciton with the electron localized in the well i, and the hole in the well j (this approach is described in details in Refs. [14,15]). In the absence of the magnetic field, the off-diagonal matrix elements that determines the transitions between the DX states in a DMS well 1e QW1 1hh QW1 i and two possible IX states, |1e QW2 1hh QW1 > and |1e QW1 1hh QW2 >, are equal to…”

Section: Methods Of Calculations and Expected Magneticmentioning

confidence: 99%

“…In DMS, the giant splitting of energy bands [12,13] allows the magnetic field to change the exciton energy. Calculations [14,15] show that in a double well structure consisting of a magnetic and a non-magnetic QWs for a certain range of parameters (wells' widths and depths, magnetic ion content, etc.) an IX state may be tuned by the external magnetic field to be the lowest energy state of the system.…”

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Excitons in tunnel coupled CdTe and (Cd,Mn)Te quantum wells

Terletskii

Ryabchenko

Sugakov

et al. 2017

Phys. Status Solidi C

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The photoluminescence (PL) from structures containing Cd0.95Mn0.05Te and CdTe quantum wells (QWs) separated by a narrow (1.94 nm) barrier was studied. The PL lines of comparable intensities from several possible exciton states were observed simultaneously at energy distances substantially exceeding kT. This means that the energy transfer in the studied systems is slower than the radiative recombination of the confined excitons. For the CdTe QW width of about 8.7–9 nm, indirect excitons with the electron and heavy hole chiefly localized in the CdTe and Cd1−xMnxTe QWs, respectively, were detected in the magnetic field. These indirect excitons have PL energy of about 10–20 meV above the PL line of the direct excitons in the CdTe QW. The observation of the PL from the indirect excitons which are not the lowest excitations in the structure is a distinctive feature of the system.Photoluminescence intensity dependence on the energy and the magnetic field.

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Electrically induced direct to indirect exciton transition in CdTe/CdMnTe concentric double quantum ring rooted in SiO₂ matrix

Sherly,

Nithiananthi

2024

Phys. Scr.

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Effect of electric field and ring dimension on the localization of direct and indirect exciton formed inside a CdTe/CdMnTe Concentric Double Quantum Ring (CDQR) has been studied using variational technique. The whole double ring structure is embedded inside a SiO2 matrix to enhance exciton localization. Electric field applied along the axial (z) axis tilts the band structure which promotes the carrier localization more in the edges than in the center of the ring. Thus, the stronger electric field gives a triangular confinement to the carrier in the edges which enhances the carrier stability. Along with the effect of electric field the ring dimension which determines the stability of the exciton retains has been estimated through the mean square distance. The effect of the location of the constituent carriers on the excitonic stability and the efficient carrier transfer from inner ring to outer ring has been calculated for both symmetric and asymmetric ring dimensions. Height of the ring has been varied to understand its effect on the localization of both direct and indirect exciton.

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Interwell excitons in semimagnetic semiconductor double quantum wells in an external magnetic field

Cited by 3 publications

References 8 publications

Hybridization of Direct and Indirect Exciton States in Double Quantum Wells CdMgTe/Cd0.95Mn0.05Te/CdMgTe/CdTe/CdMgTe

Hybridization of Direct and Indirect Exciton States in Double Quantum Wells CdMgTe/Cd0.95Mn0.05Te/CdMgTe/CdTe/CdMgTe

Excitons in tunnel coupled CdTe and (Cd,Mn)Te quantum wells

Electrically induced direct to indirect exciton transition in CdTe/CdMnTe concentric double quantum ring rooted in SiO₂ matrix

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Interwell excitons in semimagnetic semiconductor double quantum wells in an external magnetic field

Cited by 3 publications

References 8 publications

Hybridization of Direct and Indirect Exciton States in Double Quantum Wells CdMgTe/Cd0.95Mn0.05Te/CdMgTe/CdTe/CdMgTe

Hybridization of Direct and Indirect Exciton States in Double Quantum Wells CdMgTe/Cd0.95Mn0.05Te/CdMgTe/CdTe/CdMgTe

Excitons in tunnel coupled CdTe and (Cd,Mn)Te quantum wells

Electrically induced direct to indirect exciton transition in CdTe/CdMnTe concentric double quantum ring rooted in SiO2 matrix

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Electrically induced direct to indirect exciton transition in CdTe/CdMnTe concentric double quantum ring rooted in SiO₂ matrix