Inverted spin valves with IrMn biasing layer

Abstract

Inverted IrMn-based spin valves (ISV) were fabricated with the aim of low thickness/high output dual spin valve applications. Optimized structures exhibit the following characteristics: = 750 Oe, = 18 5 /sq., 1 = 7 5% and = 250 C with IrMn thickness as low as 75 A. The blocking temperature distribution, however, exhibits non zero components from 150 C onwards. Accordingly, accelerated sheet films lifetime experiments and current heating on full read/write heads show that partial rotations of the pinned layer occur well below . These structures therefore appear to be insufficiently stable for disk-drive applications.