Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method

Cited by 3 publications

References 16 publications

Triple-Level-Cell/Single-Level-Cell Mix-Mode Operation Induced Data Retention Degradation in 3-D NAND Flash Memories

Triple-Level-Cell/Single-Level-Cell Mix-Mode Operation Induced Data Retention Degradation in 3-D NAND Flash Memories

Numerical Simulation of Trapped Hole Lateral Migration and Induced Threshold Voltage Retention Loss in a SONOS Flash Memory

Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash Memory

Contact Info

Product

Resources

About