Investigation of electrical parameters and temperature analysis of a dual-metal DG PNPN TFET with extended source

Abstract

In this article, a dual-metal double-gate extended-source PNPN tunnel-FET (DG-ES-DMG TFET) is proposed and investigated. The performance of conventional double-gate PNPN TFET (DG TFET) can be improved by extending a portion of the source to the channel side, which creates vertical tunneling along with the lateral tunneling, thereby enhancing the band-to-band tunneling rate and on-current in double-gate extended-source PNPN tunnel-FET (DG-ES TFET). The performance of this DG-ES TFET can be further enhanced by introducing a dual metal gate in DG-ES-DMG TFET. The performance of the TFETs is evaluated with the help of TCAD (Technology Computer-Aided Design) software. The proposed optimized DG-ES-DMG TFET provides very good performances; On-current (ION) of 1.39 x 10-3 A/µm, On-Off current ratio (ION/IOFF) of 1.10 x 1011, subthreshold swing (SS) of 20 mV/Decade, threshold voltage (VTH) of 0.37 V, and a cut-off frequency (fT) of 188 GHz. The temperature sensitivity of the TFETs is also analyzed in this work. The comparison of the proposed TFET with other existing TFETs reveals that the proposed TFET could be a good contender for low-power applications.

Performance optimization of AlGaAs and Al x Ga 1−x As based SM-TM-DG-JL-TFET for an analog/RF applications

“…In this state, there is a rise in the number of charge carriers that undergo tunnelling from the valence band to the conduction band. Moreover, the width of the tunnelling barrier decreases, leading to band-band tunnelling shown in the equations (11) and (12). Figure 10(a) depicts the distinct features of SM and TM-DG-JL-TFET.…”

“…The ambipolar nature of the device construction might hurt the performance of the Radio-Frequency (RF) system. Furthermore, the decrease in the size of the device features to less than 100nm and the streamlining of the manufacturing process may also enhance this phenomenon [7,8]. Furthermore, it improves the transconductance and reduces the misalignment of the gate length.…”

“…However, the TFET encounters challenges such as ambipolar behaviour (conduction occurring at both positive and negative edges), limited current driving capability (due to a restricted number of charge carriers tunnelling through the junction), and ongoing efforts to tackle these issues. The SM-TM_DG-JL-TFET is a highly recommended option [11]. This revolutionary device can enhance the On-State Current and minimize the ambipolar characteristics of the TFET [12].…”