Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates

Huang, H. W.; Lu, Tien−Chang; Chang, Che‐Chen; Ling, Shih Chun; Chan, Wei-Wen; Kuo, Hao‐Chung; Wang, Shing-Chung

doi:10.1109/jlt.2011.2164896

Cited by 3 publications

(1 citation statement)

References 18 publications

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“…This inherent effect, which was called quantum-confined stark effect (QCSE), has resulted in the reduction of quantum efficiency for the GaN-based LEDs. This is because the QCSE within MQWs region lead to the significant spatial separation of the electron and hole wave functions and the reduction of the electron-hole recombination probability [1][2][3][4][5]. Furthermore, investigating the spontaneous and piezoelectric polarization-induced electrostatic field on InGaN/GaN MQWs heterostructure is a very important key issue currently.…”

Section: Introductionmentioning

confidence: 99%

Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence

Wang

Chiou²,

Chiang³

et al. 2015

International Journal of Photoenergy

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The effect of piezoelectric polarization on GaN-based light emitting diodes (LEDs) with different kinds of prestrain layers between the multiple quantum wells (MQWs) and n-GaN layer is studied and demonstrated. Compared with the conventional LED, more than 10% enhancement in the output power of the LED with prestrain layer can be attributed to the reduction of polarization field within MQWs region. In this study, we reported a simple method to provide useful comparison of polarization fields within active region in GaN-based LEDs by using temperature-dependent electroluminescence (EL) measurement. The results pointed out that the polarization field of conventional LED was stronger than that of the others due to larger variation of the wavelength transition position (i.e., blue-shift change to red-shift) from 300 to 350 K, and thus the larger polarization field must be effectively screened by injecting more carriers into the MQWs region.

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Section: Introductionmentioning

confidence: 99%

Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence

Wang

Chiou²,

Chiang³

et al. 2015

International Journal of Photoenergy

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Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires

et al. 2023

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Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

et al. 2018

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In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.

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Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates

Cited by 3 publications

References 18 publications

Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence

Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence

Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires

Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

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