Investigation of orientation dependence of piezoelectric effects in strained GaAs/InGaAs quantum well laser

Saidi, Hosni; Zitouni, Omar; Ridene, Saïd

doi:10.1016/j.mseb.2021.115400

Cited by 11 publications

(5 citation statements)

References 24 publications

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“…Due to the abrupt changes in absorption and refractive index that the quantum-confined Stark effect (QCSE) can potentially induce in a low-dimensional structure, this mechanism has excellent potential for developing ultra-fast all-optical functions for telecommunications systems using strained [111]-oriented zinc-blende multiple quantum well semiconductor optical amplifiers (MQW-SOAs) [1,2] . Indeed, these amplifiers, compared to the massive ones, exhibit higher differential gains, lower noise figures, and, notably, an internal piezoelectric field that is mainly responsible for the QCSE when they are unbiased [3,4] . Therefore, to estimate the temperature dependence of the QCSE in MQW-SOAs and thus be able to use it as a contribution to tune the energy of the excitonic resonances where required for a specific application, it is crucial to determine the temperature dependence of the piezoelectric constant e 14 .…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, to estimate the temperature dependence of the QCSE in MQW-SOAs and thus be able to use it as a contribution to tune the energy of the excitonic resonances where required for a specific application, it is crucial to determine the temperature dependence of the piezoelectric constant e 14 . Some authors estimate e 14 using linear interpolation between the piezoelectric constant values of the relevant binary semiconductors of the alloy of the quantum wells (QWs) [3,5] . Nevertheless, this procedure generates larger e 14 values than those obtained experimentally.…”

Section: Introductionmentioning

confidence: 99%

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Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Soto-Ortiz,

Torres-Miranda

2023

中国光学快报

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Here, we present a study of the effective piezoelectric constant (e 14 e ) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within a semiconductor optical amplifier (SOA). We determined e 14 e using a method that was insensitive to the segregation phenomenon and to the temperature dependence of the bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energy and out-of-plane effective masses of electrons and heavy holes. An e 14 e = −0.0534 ± 0.0040 C • m −2 at 23°C was obtained for an SOA with 1.2 nm [111]-oriented strained In 0.687 Ga 0.313 As/In 0.807 Ga 0.193 As 0.304 P 0.696 QWs. Unlike previously published research, where e 14 e magnitude increased as temperature rised, we extracted an e 14 e magnitude that decreased as temperature increased.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Soto-Ortiz,

Torres-Miranda

2023

中国光学快报

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“…Although the growth in the (001) direction leads to good crystal quality for the QWs, the optical gain is reduced due to the small energy splitting between the valence bands [14]. In addition, recent advances in growth technologies of low-dimensional hetero-structures, such as MBE (Molecular Beam Epitaxial) and MOCVD (Metal-Organic Compounds Chemical Vapor Deposition), have made it possible for nonconventional orientations of quantum well structures, and thus the optical and electrical properties of quantum well lasers grown in arbitrary crystal orientations have attracted more attention [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation

Zhao²,

Gao³

2022

Crystals

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High-speed VCSELs are widely used for high-capacity, short-range data communication links. Here, we numerically investigate the optical and electronic properties of a crystal orientation-dependent 1.06% compression InGaAs-AlGaAs laser emitting around 850 nm. The reduction of the density of states is observed in the largest energy range for the quantum well in the (110) orientation compared with the conventional (001) orientation. The calculated transparency carrier density decreases from 2.74 × 1018 cm−3 to 1.88 × 1018 cm−3 with the gain coefficient rising from 4969.4 cm−1 to 5427.2 cm−1 in (110) orientation. The 3 dB bandwidth of 31.25 GHz is realized in the (110) orientation, which can support 60 Gbps (NRZ) applications.

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“…Many efforts have been taken to improve the quality of the In x Ga 1−x As epilayer. Some researchers used linear graded buffers to stop the propagation of dislocation and others took strained superlattice to engineer the strain field [14][15][16][17][18]. Compositionally step-graded buffers were also employed.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Xu²,

Wei

et al. 2021

Crystals

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The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed ordered crosshatch morphology and a low roughness of 1.38 nm. Full relaxation, steep interface and less than one threading dislocation in the InGaAs layer were demonstrated by taking advantage of the strain compensation mechanism. Room temperature photoluminescence (PL) exhibited remarkable intensity attributed to the lower density of deep non-radiative centers. The emission peak energy with varied temperatures was in good agreement with Varshni’s empirical equation, implying high crystal quality without inhomogeneity-induced localized states. Therefore, our work shows that compositionally undulating step-graded InAsP buffers with a thinner bottom modulation layer, grown by molecular beam epitaxy, is an effective approach to prepare InGaAs materials with wavelengths longer than 2.0 μm and to break the lattice limitation on the materials with even larger mismatch.

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Investigation of orientation dependence of piezoelectric effects in strained GaAs/InGaAs quantum well laser

Cited by 11 publications

References 24 publications

Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

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