Investigation of p-type InAs nanowires grown via Au-assisted and self-assembled methods

Abstract

We have investigated the p-type doping profiling of InAs nanowries (NWs) grown via the Auassisted vapor-liquid-sold (VLS) and the self-assembled growth methods. The VLS is the most commonly used mechanism for the growth of semiconductor NWs. The VLS-grown InAs NWs, however, show a large degree of variation in their electrical resistance along their growth direction. In addition, attempts to form heavily p-type doped InAs NWs lead to a strong kinking in the shapes of the NWs, disturbing their one-dimensional growth. In contrast, the p-type doped InAs NWs grown via the self-assembled method exhibit very low and uniform electrical resistance along the growth direction of the NWs. The doping mechanisms of the InAs NWs and their growth methods are further discussed.

Self-catalyzed Growth of InAs Nanowires on InP Substrate

“…Figure 3 shows the TEM image of a single NW from sample C. A large number of twin faults are observed from the selective area electron diffraction (SAED), which have been widely reported in self-catalyzed InAs NWs [25, 26]. The twin faults usually occur with a transition of external facets during the nucleation formation and the free energy of the nucleus formation depends on the contact angle of the liquid droplet with respect to the solid–vapor facet [27].…”