Investigation of phase transition properties of ZrO2 thin films

Kumar, Dinesh; Singh, Avtar; Kaur, Manpreet; Rana, Vikrant; Kaur, Raminder

doi:10.1063/1.5032409

Cited by 4 publications

(1 citation statement)

References 9 publications

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“…Higher the deviation of texture coefficient from unity, higher will be the preferred orientation of that particular plane. Texture coefficient, TC(h i k i l i ) was determined using Harris's formula [62][63][64] from the XRD patterns given by Here TC(h i k i l i ), I 0 (h i k i l i ), I(h i k i l i ) and n are the texture coefficient corresponding to plane specified by miller indices (h i k i l i ), standard diffraction peak intensities, specimen diffraction peak intensities and number of different peaks taken into account, respectively. Preferred orientation of pure ZrO 2 is along (211) plane.…”

Section: = K Cosmentioning

confidence: 99%

Tailoring structural and optical properties of ZrO2 with nickel doping

et al. 2020

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Pure and nickel doped zirconium oxide (ZrO 2) samples namely N1, N2, N3, N4 have been synthesized by sol-gel method at different doping concentrations (0, 1, 3 and 5 molar percentage respectively). Energy dispersive X-ray spectroscopy (EDS) was used to confirm the elemental composition of samples. X-ray diffraction data following Rietveld refinement revealed the stabilization of tetragonal phase with some impurity of monoclinic phase. Unit cell volume and tetragonality (c/a) ratio was found to be in good agreement with standard values. Results showed the increase in unit cell volume with the decrease in crystallite size. UV-visible spectroscopy, revealed the variation in optical band gap with increase in Ni dopant in ZrO 2 nano-crystals due to combined effect of quantum confinement and generation of interstitial sites.

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Section: = K Cosmentioning

confidence: 99%

Tailoring structural and optical properties of ZrO2 with nickel doping

et al. 2020

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Sol-Ageing Effect on the Structural and Optical Properties of Undoped and Doped ZrO2 Thin Films

Kumar

Singh

Shinde

et al. 2022

Prot Met Phys Chem Surf

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Enhanced charge storage capability of (Bi₂O₃)0.4(ZrO₂)0.6 charge trapping layer in nanocrystal memory devices

Zhou

Qiu

et al. 2019

Funct. Mater. Lett.

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A structure of p-Si/Al2O3/(Bi2O3)[Formula: see text](ZrO2)[Formula: see text](BZO)/Al2O3/Pt has been fabricated as Nanocrystal Charge Trapping Memory (NCTM), where the double nanocrystals (NCs) of Bi2O3 and ZrO2 generated in BZO charge trapping layer (CTL) through rapid temperature annealing (RTA). A large memory window (MW) of [Formula: see text]8.6[Formula: see text]V and high defect traps of [Formula: see text][Formula: see text]cm[Formula: see text] were obtained at a low sweeping voltages of [Formula: see text]8[Formula: see text]V after 800∘C for 90[Formula: see text]s in O2 ambient. The devices of different RTA conditions were investigated to analyze the process of NCs traps formation by the X-ray diffraction and X-ray photoelectron spectroscopy. Excellent retention characteristics of the room temperature were observed after 104[Formula: see text]s because of the deep defect traps and high quantum wells between CTL and tunneling oxide layer (TOL).

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Investigation of phase transition properties of ZrO2 thin films

Cited by 4 publications

References 9 publications

Tailoring structural and optical properties of ZrO2 with nickel doping

Tailoring structural and optical properties of ZrO2 with nickel doping

Sol-Ageing Effect on the Structural and Optical Properties of Undoped and Doped ZrO2 Thin Films

Enhanced charge storage capability of (Bi₂O₃)0.4(ZrO₂)0.6 charge trapping layer in nanocrystal memory devices

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Investigation of phase transition properties of ZrO2 thin films

Cited by 4 publications

References 9 publications

Tailoring structural and optical properties of ZrO2 with nickel doping

Tailoring structural and optical properties of ZrO2 with nickel doping

Sol-Ageing Effect on the Structural and Optical Properties of Undoped and Doped ZrO2 Thin Films

Enhanced charge storage capability of (Bi2O3)0.4(ZrO2)0.6 charge trapping layer in nanocrystal memory devices

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Enhanced charge storage capability of (Bi₂O₃)0.4(ZrO₂)0.6 charge trapping layer in nanocrystal memory devices