Investigation of solution processed molybdenum oxide as selective contacts for silicon solar cells application

Lu, Chenjin; Rusli, Rusli; Prakoso, Ari Bimo; Li, Zeyu

doi:10.1016/j.matchemphys.2019.121779

Cited by 19 publications

(19 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The open-circuit voltage V oc and current density J L are used to define two other important characteristics of a solar cell which are filling factor (FF) and its efficiency η. For their calculations the dark current density can be simulated within the two-diode model [32][33][34] as [9,35]…”

Section: Equations For the Dark Current Efficiency Of The Solar Energy Conversion And Ffmentioning

confidence: 99%

“…The dark current density in Equation ( 18) was calculated with J s1 exp(Àqφ B /kT ) ¼ (3À6) Â 10 À11 mA cm À2 and n 1 ¼ 1, [9,35,42] J s2 exp(Àqφ A /kT ) ¼ 10 À7 À10 À5 mA cm À2 , n 2 ¼ 1.5 [43][44][45] or J s2 exp(Àqφ A /kT) ¼ 0.005À0.020 mA cm À2 , and n 2 ¼ 2.9À3.0. [9,42] Particular values for the exponent containing terms were chosen according to their dependence of the donor concentration in Si.…”

Section: Data For the Modelingmentioning

confidence: 99%

“…[6] Substantial difference in electron work functions between silicon (Si) and most metal oxides (MOs) results in energy band bending, providing an enhanced separation of photogenerated charge carriers at the interface of MO/Si heterostructures. It has been already demonstrated for heterostructures with semiconducting oxides such as MoO x , [8][9][10][11][12][13][14] VO x , [15][16][17] WO x , [18,19] NiO x and TiO x , [7,20,21] CuO x , and [22,23] MoS x [24] having bandgaps in the range of 3.0À3.8 eV and electron work functions between 4.5 and 6.5 eV. [24] Meanwhile, mechanisms of the charge carrier separation at the MO/Si interfaces and subsequent carrier transport through the MO layers have not been analyzed in detail.…”

Section: Introductionmentioning

confidence: 99%

“…[24] Meanwhile, mechanisms of the charge carrier separation at the MO/Si interfaces and subsequent carrier transport through the MO layers have not been analyzed in detail. [9,14,25] Note that interband tunneling and trap-assisted tunneling are important mechanisms in the operation of the MO/Si heterostructures and have to be considered. [26] In this article, we propose a model of an enhancement of charge carrier separation and their transport in heterojunction solar cells composed of a semiconductor (Sem) and metal oxide.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

An Enhanced Charge Carrier Separation in a Heterojunction Solar Cell with a Metal Oxide

Danilyuk

Sidorova

Борисенко

et al. 2021

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

A model of charge carrier transport in heterojunction solar cells composed of a solar light‐absorbing semiconductor and a wide‐bandgap semiconducting metal oxide is proposed. It describes an electric field in the semiconductor originating from the difference in the electron work functions between the two contacting materials, an enhanced hole separation by this field, and subsequent trap‐assisted tunneling of holes through the semiconducting oxide. The model predicts a dramatic influence of the donor concentration in the semiconductor, trap parameters in the oxide, and ideality factor of the semiconductor/oxide heterojunction on the performance of the cell. The efficiency of the solar energy harvesting by MoO x /n‐Si solar cells is calculated to reach 23% of the donor concentration in Si of 1018 cm−3 at a limited hole current density. It is predicted to be reduced to 16−18% when donor concentration is in the range of 1015−1016 cm−3. The numerical predictions agree well with experimental data, at least for donor concentrations in Si below 1018 cm−3, confirming suitability of the model for heterojunction solar cells composed of other semiconductors and semiconducting metal oxides.

show abstract

Section: Equations For the Dark Current Efficiency Of The Solar Energy Conversion And Ffmentioning

confidence: 99%

Section: Data For the Modelingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

An Enhanced Charge Carrier Separation in a Heterojunction Solar Cell with a Metal Oxide

Danilyuk

Sidorova

Борисенко

et al. 2021

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…Recently, solution‐processed MoO x hole‐selective layer for silicon solar cell has been demonstrated with the efficiency of 8.22%. [ 31 ] Until now, solution‐processed hole‐selective TMO for silicon solar cells with efficiency over 15% has not been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Solution‐Processed Copper‐Doped Chromium Oxide with Tunable Oxygen Vacancy for Crystalline Silicon Solar Cells Hole‐Selective Contacts

Peng

Lin

et al. 2021

Solar RRL

View full text Add to dashboard Cite

Compared with vacuum evaporation, metal oxides deposited by solution process exhibit advantages, for example, dopants can be easily incorporated in a wide range and the contents are easy to be regulated by changing the composition of precursors. Herein, solution‐processed p‐type copper‐doped chromium oxide (Cu:CrOx) films with tunable oxygen vacancy are demonstrated via a postannealing process. The synthetic and postannealing temperature have a significant impact on the chromium cation oxidation state in the Cu:CrOx films, leading to the variation of work function for the oxide films. By adjusting the work function of Cu:CrOx films, a low contact resistivity of 95 mΩ cm2 can be realized for the Ag/Cu:CrOx/p‐Si contact. Finally, the optimized Cu:CrOx films are used as the hole transporting layer in c‐Si solar cells, showing an increased power conversion efficiency from 15.2% (without Cu:CrOx) to 16.9% (with Cu:CrOx). The results show an effective stage to use p‐type metal oxides as a hole‐selective layer in c‐Si solar cells.

show abstract

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

Kim,

Park,

Cho

et al. 2023

Solar RRL

View full text Add to dashboard Cite

Crystalline silicon (c‐Si) solar cells have dominated the photovoltaic market due to their superior mechanical and thermal robustness, nonhazardous nature, optimal energy bandgap, and the availability of established manufacturing techniques. However, conventional c‐Si solar cells fabricated through thermal doping processes present challenges such as high recombination rates and increased production costs. Recently, dopant‐free solar cells have emerged as a promising next‐generation approach; they offer numerous advantages, such as reduced recombination, cost‐effectiveness, environmental friendliness, and applicability to nano‐ and submicrometer structures. This review evaluates the strengths and weaknesses of dopant‐free passivating contact materials for emitters, tracing the development of dopant‐free solar cells from the earliest reports to the current state‐of‐the‐art. A systematic evaluation of these materials based on their electrical and optical properties, coating conformality, stability, and overall photovoltaic performance is presented. Moreover, the limitations of dopant‐free solar cells are identified and strategies to further enhance their efficiency are proposed.

show abstract

Investigation of solution processed molybdenum oxide as selective contacts for silicon solar cells application

Cited by 19 publications

References 52 publications

An Enhanced Charge Carrier Separation in a Heterojunction Solar Cell with a Metal Oxide

An Enhanced Charge Carrier Separation in a Heterojunction Solar Cell with a Metal Oxide

Solution‐Processed Copper‐Doped Chromium Oxide with Tunable Oxygen Vacancy for Crystalline Silicon Solar Cells Hole‐Selective Contacts

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

Contact Info

Product

Resources

About