Investigation of the Weak‐Field Charge Transport in Semiconducting V₂−VI₃ Compounds with Trigonal Symmetry II. Interpretation of the Weak‐Field Charge Transport in Sb₂Te₃ Single Crystals

Abstract

M. STORDEUR and G. SIMON~) BYIt is succeeded for the first time to interpret the thermoelectric and galvanomagnetic effects, in terms of a nonparabolic six-valley one-valence band model and anisotropic mixed scattering on acoustical phonons and ionized impurities and also the magnitude of thermomagnetic effects and the Lorenz numbers for Sb,Te, single crystals in dependence on temperature between 100 t o 300 K using physical relevant microscopic transport data. By a numerical analysis the effective main axis masses m z , the tilt angle of Fermi ellipsoid 8, the masses m L c , milc, the density of state effective mass md, the mobilities u l c , ullc, and the carrier density ptot are calculated. Also the Fermi level EF, the relaxation time factor zy, the mixture parameters BY and the parameter of nonparabolicity B are given. The calculated values are in good agreement with the corresponding data found by using optical effects a t 80 K and 300 K. I m Rahmen eines nichtparabolischen Sechstal-Ein-Valenzbandmodells und anisotrop-gemischterStreuung an akustischen Phononen und ionisierten Storstellen ist es erstmals gelungen, die Temperaturabhangigkeit zwischen 100 und 300 K der thermoelektrischen, galvanomagnetischen sowie der GroBe der thermomagnetischen Effekte und der Lorenzzahlen von Sb,Te,-Einkristallen mit physikalisch relevanten mikroskopischen Transportdaten zu erkliiren. Mittels einer numerischen

Effect of sintering temperature on the thermoelectric properties of pulse discharge sintered (Bi0.24Sb0.76)2Te3 alloy

“…The anti-site defects are generated by occupation of Bi and Sb atoms into the vacant Te sites and simultaneously holes are increased. Some work [18,19] reported the thermoelectric properties of the compound Sb 2 Te 3 as a function of carrier concentration and their anisotropy, which is consistent with the results in the present work. The results are related to a complex valence band structure.…”

Transport coefficients and defect structure of Sb2−Ag Te3 single crystals

“…For g we used the value of 0.74 given in the Ref. [6] and we assumed that the value of g does not change with the incorporation of Ag into the crystal lattice of Sb 2 Te 3 . Moreover, we took the value of the scattering factor r H to be unity, i.e.…”

Atomically smooth ultrathin films of topological insulator Sb2Te3

“…In these materials, doping had to be used to move the Fermi energy back to the bulk gap [13,14,16]. Sb 2 Te 3 has been extensively studied in the context of thermoelectric material research [30,31] and the growth of Sb 2 Te 3 films by MBE and other techniques has been investigated [32][33][34]. In fact, p-type Bi 2 Te 3 /Sb 2 Te 3 superlattices were found to possess the highest thermoelectric figure of merit (ZT) of about 2.4 at 300 K [35].…”